Publications associées à Control store

VWR2A: A Very-Wide-Register Reconfigurable-Array Architecture for Low-Power Embedded Devices

David Atienza Alonso, Miguel Peon Quiros, Benoît Walter Denkinger

Edge-computing requires high-performance energy-efficient embedded systems. Fixed-function or custom accelerators, such as FFT or FIR filter engines, are very efficient at implementing a particular functionality for a given set of constraints. However, the ...

ASSOC COMPUTING MACHINERY2022

mu RAI: Securing Embedded Systems with Return Address Integrity

Mathias Josef Payer

Embedded systems are deployed in security critical environments and have become a prominent target for remote attacks. Microcontroller-based systems (MCUS) are particularly vulnerable due to a combination of limited resources and low level programming whic ...

INTERNET SOC2020

Ultra High-Speed Hardware Emulator for Real-Time Fault Location in Multi-Conductor Power Systems

Maher Kayal, François Krummenacher, François Pierre Gaugaz

This research presents a transmission line model aimed for the fault location in power systems using a method based on the Electromagnetic Time-Reversal (EMTR). The discrete-time model simulates the waves travelling in the line by means of many unit delays ...

IEEE2018

Microarchitectural Low-Power Design Techniques for Embedded Microprocessors

Jeremy Hugues-Felix Constantin

With the omnipresence of embedded processing in all forms of electronics today, there is a strong trend towards wireless, battery-powered, portable embedded systems which have to operate under stringent energy constraints. Consequently, low power consumpti ...

EPFL2016

Top-Down Fabrication of Gate-All-Around Vertically-Stacked Silicon Nanowire FETs with Controllable Polarity

Giovanni De Micheli, Davide Sacchetto, Yusuf Leblebici, Jian Zhang, Pierre-Emmanuel Julien Marc Gaillardon, Michele De Marchi

Asthe currentMOSFET scaling trend is facing strong limitations, technologies exploiting novel degrees of freedom at physical and architecture level are promising candidates to enable the continuation of Moore's predictions. In this paper, we report on the ...

Institute of Electrical and Electronics Engineers2014

Polarity Control in Double-Gate, Gate-All-Around Vertically Stacked Silicon Nanowire FETs

Giovanni De Micheli, Davide Sacchetto, Yusuf Leblebici, Pierre-Emmanuel Julien Marc Gaillardon, Jian Zhang, Michele De Marchi

We fabricated and characterized ambipolar Silicon Nanowire (SiNW) FET transistors featuring two independent Gate-All-Around (GAA) electrodes and vertically stacked SiNW channels. One of the gate electrodes is exploited to dynamically select the polarity of ...

2012

Fabrication and Characterization of Vertically Stacked Gate-All-Around Si Nanowire FET Arrays

Giovanni De Micheli, Davide Sacchetto, Yusuf Leblebici, Mohamed Haykel Ben Jamaa

We describe the fabrication of vertically stacked Silicon Nanowire Field Effect Transistors (SiNWFETs) in Gate-All Around (GAA) configuration. Stacks with the number of channels ranging from 1 to 12 have been successfully produced by means of a micrometer ...

2009