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A double discharge TEA CO2 laser of simple design has been tested. The linearly polarized beam delivers a total energy of 14 Joules in 25 ns. The influence of the different gas mixtures on the problem of arcing, delay between pumping and lasing, and evolut ...
The first experimental observation of a radio frequency (rf) wave-induced particle pinch of trapped ions has been made in experiments at the Joint European Torus with nearly on-axis high power toroidally asymmetric ICRF (ion cyclotron range of frequencies) ...
A coupled heat and particle transport phenomenon, leading to particle depletion from the plasma core is observed in a variety of plasma conditions with centrally deposited electron cyclotron heating and electron cyclotron current drive in TCV. This phenome ...
'Micromorph' tandem solar cells consisting of a microcrystalline silicon bottom cell and an amorphous silicon top cell are considered as one of the most promising new thin-film silicon solar-cell concepts. Their promise lies in the hope of simultaneously a ...
In situ Fourier transform infrared (FTIR) absorption spectroscopy has been used to determine the fractional depletion of silane in a radio-frequency (ri) glow discharge. The technique used a simple single-pass arrangement and was implemented in a large-are ...
Although linear response models are useful for feedback controller design, their linear time-invariant properties cannot simulate the evolution of a full plasma discharge. A suitable code for this purpose is DINA, which has now been benchmarked against a c ...
Previous measurements of SixHm- anions and electrons in the afterglow of silane discharges are analyzed here. A model of plasma anion chemistry includes two sources of anions, two possible causes of x-->x+1 anion growth, and anion loss by mutual neutraliza ...
Microcrystalline silicon (μc-Si:H) layers deposited by the very high-frequency-glow discharge technique at a radio-frequency excitation of 70 MHz are observed to be basically slightly 〈n〉 type. By doping (so-called]] microdoping") with boron in the gas pha ...
a-Si:H films were prepared using pure silane in the temperature range from 200 degrees C up to 400 degrees C by the very high frequency glow discharge (VHF-GD) technique. During deposition a He/Ne laser beam directed across the discharge monitored powder f ...
