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We present improved processing of the soft amorphous ferromagnetic material for the fully integrated fluxgate magnetometer. The additional steps of polishing, chemical thinning and annealing are introduced to preserve the original material characteristics ...
The paper brings results of far infrared transmission studies of relaxor ferroelectric PbMg1/3Nb2/3O3 and PbSc1/2Ta1/2O3 thin films performed at temperatures between 10K and 900K. The spectra clearly show that the lowest-frequency polar optic phonon soften ...
The paper describes processing and dielectric properties of 0.65Pb(Mn1/3Nb2/3)O-3-0.35PbTiO(3) films deposited on alumina and silicon substrates by screen-printing. Ink development and problems associated with adhesion of electrodes to substrate are discus ...
Heat and charge transport perpendicular to the plan in five Co/Cu stacks are studied using AC temperature gradients in the presence of a DC current. Large peaks in AC voltage response versus applied field are observed. This effect, measured only in reversi ...
The preparation and dielectric properties of potassium niobate tantalate (KTN) have been investigated with the aim of exploring the material's potential for ferroelectric tunable applications. The samples were prepared both by conventional sintering in air ...
Performance differences in the growing number of electromagnetic (EM) sensing systems designed to predict soil water content from dielectric permittivity estimates suggests the need for a standardized characterization methodology. The objectives of this st ...
A model of the quasi-Debye loss mechanism in SrTiO3 and Ba0.6Sr0.4TiO3 perovskite ferroelectrics at microwave frequencies is presented. The field dependence and the size of the field-induced quasi-Debye loss contribution in SrTiO3 and Ba0.6Sr0.4TiO3 system ...
The dielectric response of a ferroelectric film with bilinear coupling between order parameter and strain is theoretically addressed. An exact solution for the total (lattice and domain contributions) dielectric permittivity of the system for the case wher ...
We study the electronic structure and the dielectric permittivity of ultrathin oxide layers on Si(I 00) substrates. By considering two different Si(l 00)-SiO2 interface models, we first show that the electronic structure in the interfacial oxide differs fr ...
The change in permittivity of bismuth zinc niobate (BZN) films with the cubic pyrochlore structure under an applied electric field was measured as a function of temperature. Dielectric measurements were performed using parallel-plate capacitor structures w ...
