Concept

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Publications associées (766)

Fundamentals and applications of electrochemistry

The Voltaic pile, invented here on Lake Como 200 years ago, was a crucial step in the development of electrical engineering. For the first time a controlled and reliable source of electric current was available. The science of electrochemistry developed ra ...

E D P Sciences2013

Ambipolar silicon nanowire field effect transistor

Giovanni De Micheli, Davide Sacchetto, Yusuf Leblebici, Michele De Marchi

This invention describes a novel electronic device consisting of one-or more-vertically stacked gate-all-around silicon nanowire field effect transistor (SNWFET) with two independent gate electrodes. One of the two gate electrodes, acting on the central se ...

2013

Multiscale phase mapping of LiFePO4-based electrodes by transmission electron microscopy and electron forward scattering diffraction

Cyril Cayron

LiFePO4 and FePO4 phase distributions of entire cross-sectioned electrodes with various Li content are investigated from nanoscale to mesoscale, by transmission electron microscopy and by the new electron forward scattering diffraction technique. The distr ...

2013

Smoothening intermediate reflecting layer for tandem thin-film silicon solar cells

Christophe Ballif, Corsin Battaglia, Nicolas Blondiaux, Matthieu Despeisse, Mathieu Gérard Boccard

We introduce the concept of smoothening intermediate reflecting layers (IRLs) in Micromorph thin-film silicon tandem solar cells in the superstrate configuration. The aim of such structures is not only to provide a selective reflection of light for optimal ...

Elsevier2013

A Hall sensor microsystem with integrated voltage and current references for continuous sensitivity calibration

Maher Kayal, Marc Pastre, Andrea Ajbl

This paper presents a Hall sensor microsystem output and sensitivity calibration targeting low drift (

IEEE2012

CAFM investigations of filamentary conduction in Cu2O ReRAM devices fabricated using stencil lithography technique

Jürgen Brugger, Andreea Veronica Savu

With the objective of understanding the role of size and current level of filamentary regions on the resistive switching parameters, detailed conductive atomic force microscope investigations of resistive memory cells having different dimensions have been ...

Institute of Physics2012

Low Leakage Normally-off Tri-gate GaN MISFET

Elison de Nazareth Matioli, Bin Lu

A new tri-gate normally-off GaN metal-insulator-semiconductor field effect transistor (MISFET) is presented in this paper. By using a three-dimensional gate structure with combination of a sub-micron gate recess, the new device achieves a very low off-stat ...

Ieee2012

On input design for direct data-driven controller tuning

Alireza Karimi

In recent years, noniterative Correlation-based Tuning (CbT) and Virtual Reference Feedback Tuning (VRFT) have been proposed as an alternative to the standard model-based approach for model-reference control design. In this work, the problem of input desig ...

2012

A Hall sensor microsystem with continuous gain calibration using fully integrated references

Maher Kayal, Marc Pastre, Andrea Ajbl

This paper presents an integrated Hall sensor microsystem with continuous gain calibration and a current-mode back-end. The integrated system includes a Hall sensor with internal biasing, a fully differential front-end, a preamplifier chain, a voltage-to-c ...

IEEE2012

Quantitative Determination of the Band Gap of WS2 with Ambipolar Ionic Liquid-Gated Transistors

Helmuth Berger

We realized ambipolar field-effect transistors by coupling exfoliated thin flakes of tungsten disulfide (WS2) with an ionic liquid dielectric. The devices show ideal electrical characteristics, including very steep subthreshold slopes for both electrons an ...

Amer Chemical Soc2012

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