Publications associées à Die (circuit intégré)

Dopant-Induced Modifications of GaxIn(1-x)P Nanowire-Based p-n Junctions Monolithically Integrated on Si(111)

Anna Fontcuberta i Morral, Kirsten Emilie Moselund, Luca Francaviglia, Rolf Erni, Heike Riel, Nicolas Bologna

Today, silicon is the most used material in photovoltaics, with the maximum conversion efficiency getting very close to the Shockley-Queisser limit for single-junction devices. Integrating silicon with higher band-gap ternary III-V absorbers is the path to ...

AMER CHEMICAL SOC2018

A Low-Voltage Radiation-Hardened 13T SRAM Bitcell for Ultralow Power Space Applications

Adam Shmuel Teman, Robert Giterman, Pascal Andreas Meinerzhagen

Continuous transistor scaling, coupled with the growing demand for low-voltage, low-power applications, increases the susceptibility of VLSI circuits to soft-errors, especially when exposed to extreme environmental conditions, such as those encountered by ...

Institute of Electrical and Electronics Engineers2016

Integration of 2D and 3D Thin Film Glassy Carbon Electrode Arrays for Electrochemical Dopamine Sensing in Flexible Neuroelectronic Implants

Philippe Renaud, André Mercanzini, Jules John Vandersarl

Here we present the development and characterization of a flexible implantable neural probe with glassy carbon electrode arrays. The use of carbon electrodes allows for these devices to be used as chemical sensors, in addition to their typical use as elect ...

Wiley-Blackwell2015

3D-ICE: a Compact Thermal Model for Early-Stage Design of Liquid-Cooled ICs

David Atienza Alonso, Arvind Raj Mahankali Sridhar, Alessandro Vincenzi

Liquid-cooling using microchannel heat sinks etched on silicon dies is seen as a promising solution to the rising heat fluxes in two-dimensional and stacked three-dimensional integrated circuits. Development of such devices requires accurate and fast therm ...

Institute of Electrical and Electronics Engineers2014

Cell Transformations and Physical Design Techniques for 3D Monolithic Integrated Circuits

Giovanni De Micheli, Shashi Kanth Bobba

3D monolithic integration (3DMI), also termed as sequential integration, is a potential technology for future gigascale circuits. In 3DMI technology the 3D contacts, connecting different active layers, are in the order of few 100 nm. Given the advantage of ...

2013

High-temperature compatible 3D-integration processes for a vacuum-sealed CNT-based NEMS

Nico de Rooij, Danick Briand, Terunobu Akiyama, Rokhaya Gueye

A System-in-Package (SiP) concept for the 3D-integration of a Single Wall Carbon Nanotube (SWCNT) resonator with its CMOS driving electronics is presented. The key element of this advanced SiP is the monolithic 3D-integration of the MEMS with the CMOS elec ...

SPIE - International Society of Optical Engineering2013

Large-scale, in-situ integration of horizontal carbon nanotube arrays into gas sensing devices

Mihai Adrian Ionescu, Montserrat Fernandez-Bolanos Badia, Hoël Maxime Guérin

The successful experimental demonstration of large-scale and in-situ growth of horizontal, dense and aligned carbon nanotube (CNT) arrays is presented. This new CNT growth process is developed for the direct integration of nanotubes into gas sensing device ...

2013

Nanoindentation cracking in gallium arsenide: Part II. TEM investigation

Johann Michler, Jacques Giovanola, Jean-Daniel Ganière, Jean-Marc Breguet, Cédric Pouvreau

The nanoindentation fracture behavior of gallium arsenide (GaAs) is examined from two perspectives in two parent papers. In the first paper (part I), we address the morphology of the crack field induced by different types of indenters by means of in situ n ...

Cambridge University Press2013

Layout and Architecture Issues in Hall based CMOS microsystems

Pierre-André Farine, Pavel Kejik

The Hall cells intended for industrial applications are mainly produced in silicon integrated circuit technology. Recently, the increased use of other technologies, such as GaAs, InAs and InSb, have been reported. However, a single chip solution comprising ...

Czech Technical University in Prague, Faculty of Electrical Engineering2012

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Die (circuit intégré)

Dopant-Induced Modifications of GaxIn(1-x)P Nanowire-Based p-n Junctions Monolithically Integrated on Si(111)

A Low-Voltage Radiation-Hardened 13T SRAM Bitcell for Ultralow Power Space Applications

A low-voltage CMOS-compatible time-domain photodetector, device & front end electronics

Integration of 2D and 3D Thin Film Glassy Carbon Electrode Arrays for Electrochemical Dopamine Sensing in Flexible Neuroelectronic Implants

3D-ICE: a Compact Thermal Model for Early-Stage Design of Liquid-Cooled ICs

Cell Transformations and Physical Design Techniques for 3D Monolithic Integrated Circuits

High-temperature compatible 3D-integration processes for a vacuum-sealed CNT-based NEMS

Large-scale, in-situ integration of horizontal carbon nanotube arrays into gas sensing devices

Nanoindentation cracking in gallium arsenide: Part II. TEM investigation

Layout and Architecture Issues in Hall based CMOS microsystems

Graph Chatbot

Chattez avec Graph Search

A low-voltage CMOS-compatible time-domain photodetector, device & front end electronics

A Low-Voltage Radiation-Hardened 13T SRAM Bitcell for Ultralow Power Space Applications

3D-ICE: a Compact Thermal Model for Early-Stage Design of Liquid-Cooled ICs

Dopant-Induced Modifications of GaxIn(1-x)P Nanowire-Based p-n Junctions Monolithically Integrated on Si(111)

Integration of 2D and 3D Thin Film Glassy Carbon Electrode Arrays for Electrochemical Dopamine Sensing in Flexible Neuroelectronic Implants

Large-scale, in-situ integration of horizontal carbon nanotube arrays into gas sensing devices

Nanoindentation cracking in gallium arsenide: Part II. TEM investigation

Layout and Architecture Issues in Hall based CMOS microsystems