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WE examine the present state of holographic random access memory (HRAM) systems and address the primary challenges that face this technology, specifically size, speed, and cost. We show that a fast HRAM system can be implemented with a compact architecture ...
The domain nucleation and growth during polarization switching in Pb(Zr,Ti)O-3 (PZT) ferroelectric thin film capacitors with Pt top (TE) and bottom electrodes (BE) were studied by means of atomic force microscopy (AFM). The experimental configuration used ...
The objective of this work was to develop a solid-state dye-sensitized solar cell, in which the liquid electrolyte, commonly applied in photoelectrochemical cells, is replaced by a solid organic charge transport material (spiro-OMeTAD). The dye-sensitized ...
GaInN and GaN were grown by molecular beam epitaxy on c-plane sapphire using NH3. 9 K photoluminescence performed on both GaInN thin layers and GaInN/GaN multiple-quantum wells (MQWs) exhibits narrow emission (similar to 50 meV linewidths). Transmission el ...
Microcavity light-emitting diodes (MCLEDs) with top-emitting geometry have been grown by molecular beam epitaxy on GaAs and Si substrates. External quantum efficiencies of up to 10% were obtained for 420 x 420 mu m(2) homoepitaxial devices. The efficiency ...
A comprehensive study of: leakage conduction in Pb(ZrxTi1-x)O-3 films with Pt electrodes is carried out. The conduction properties of films prepared in different ways (sol-gel coating, metalorganic chemical vapor deposition, sputtering) were studied by usi ...
GaN and InGaN alloys were grown on c-plane sapphire substrates by molecular beam epitaxy using NH3. This allows realizing light emitting diodes (LEDs) based on InGaN/GaN single heterostructures. The forward voltage is 3.6 V at 20 mA. The room temperature e ...
In this paper we analyse a new type of silicon strain sensor based on the piezo- tunneling effect in a silicon lateral backward diode. The implantation profiles of the junction have been optimised to obtain a prevailing tunneling current at the reverse bia ...
The growth of GaN layers was carried out on c-plane sapphire substrates by molecular beam epitaxy (MBE) using NH3. Undoped GaN layers were grown at 830 degrees C with growth rates larger than 1 mu m/h. Optical properties are characteristics of high quality ...
Leakage conduction of Pt-Pb(ZrXTi:(1-X))O-3-Pt capacitors is studied by means of different measuring techniques and analyzed in terms of semiconductor properties of the system. Based on the experimental data, it is concluded that two different regimes of c ...
