Concept

Triméthylgallium

Publications associées (51)

High-quality AlInN for high index contrast Bragg mirrors lattice matched to GaN

We report on the growth by metalorganic vapor phase epitaxy of high-quality Al1-xInxN layers and AlInN/GaN Bragg mirrors near lattice matched to GaN. Layers are grown on a GaN buffer layer with no cracks over full 2 in. sapphire wafers. The index contrast ...

2003

In distribution in InGaN quantum wells: influence of phase separation, In segregation and In desorption

Nicolas Grandjean

The local In distribution in InGaN quantum wells was measured in samples which were grown by metalorganic vapor phase epitaxy (MOVPE) and molecular beam epitaxy (MBE) varying systematically the metal-flux ratio and the growth rate. The composition analyses ...

IOP2003

Indium distribution inside quantum wells: The effect of growth interruption in MBE

Nicolas Grandjean

Quantitative analysis of high resolution electron microscopy image has been carried out to measure the indium distribution inside InGaN/GaN quantum well. The analyzed samples were nominally grown with 15% indium composition by molecular beam epitaxy with i ...

Materials Research Society2003

Influence of high Mg doping on the microstructural and optoelectronic properties of GaN

Nicolas Grandjean, Eric Feltin

A transmission electron microscopy study of a wide range of p-type GaN samples reveals that high Mg doping has a strong influence on the polarity of GaN. The main characteristic of Mg-doped metal organic vapour phase epitaxy (MOVPE) and bulk GaN is the pre ...

2002

Photoconductance measurements and Stokes shift in InGaN alloys

Nicolas Grandjean

We report the results of photoluminescence (PL), transmission and photoconductance (PC) studies of InxGa1-xN alloys grown by metalorganic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE). First, we demonstrate that PC measurements allow to ...

2001

Photoreflectance investigations of the bowing parameter in AlGaN alloys lattice-matched to GaN

Nicolas Grandjean

Room temperature photoreflectance investigations have been performed on a series of AlGaN layers grown both by metalorganic vapor phase epitaxy and molecular beam epitaxy on c-plane sapphire substrates. The aluminum composition was ranging between 0% and 2 ...

1999

Thermal stability of GaN investigated by Raman scattering

Nicolas Grandjean

We have investigated the thermal stability of GaN using Raman scattering, Noninvasive optical monitoring of the degradation of GaN during high-temperature processing has been demonstrated. GaN samples grown by molecular-beam epitaxy (MBE) and metalorganic ...

1999

Correlation of electrical anisotropies of HEMT devices with defect distribution and InGaAs well roughness

Marcel Py

In this study we used transmission electron microscopy (TEM) to assess the origin of the electrical behaviour of two dimensional electron gas (2DEG) in high electron mobility transistors (HEMTs) based upon InAlAs/InGaAs heterostructures grown on InP substr ...

1997

Luminescence and reflectivity of GaN/sapphire grown by MOVPE, GSMBE and HVPE

Nicolas Grandjean

This work presents an optical characterization by luminescence and reflectivity of GaN layers grown on sapphire using MOVPE, HVPE and GSMBE. Well resolved optical spectra are obtained for each growth technique. The luminescence of Mg doped MOVPE grown GaN ...

1996

Movpe Growth and Properties of Gap Using Nitrogen Bridged Adduct

Amongst the new precursors for the III component in MOVPE there are numerous nitrogen containing compounds. Using those compounds, besides the electrical and optical quality of the grown material, the question of incorporation of nitrogen arises. We presen ...

1992

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