Publications associées à Power semiconductor device

94-GHz Large-Signal Operation of AlInN/GaN High-Electron-Mobility Transistors on Silicon With Regrown Ohmic Contacts

Nicolas Grandjean, Jean-François Carlin, Marco Malinverni, Lorenzo Lugani

We report the first 94-GHz (W-band) large-signal performance of AlInN/GaN high-electron-mobility transistors (HEMTs) grown on high-resistivity silicon (111) substrates. A maximum output power density of 1.35 W/mm and peak power-added-efficiency of 12% are ...

Ieee-Inst Electrical Electronics Engineers Inc2015

Modeling Parasitic Vertical PNP in HVCMOS

Maher Kayal, Jean-Michel Sallese, Camillo Stefanucci, Pietro Buccella

High voltage CMOS active devices inherently have a parasitic vertical bipolar transistor. The parasitic PNP structure can be activated during high-power switching operation causing a potential shift of the substrate. In this work a spice-modeling approach ...

IEEE2015

On the Design of a Fault Tolerant Ripple-Carry Adder with Controllable-Polarity Transistors

Giovanni De Micheli, Eduardo Sanchez, Pierre-Emmanuel Julien Marc Gaillardon, Jian Zhang, Hassan Ghasemzadeh Mohammadi

This paper first explores the effects of faults on circuits implemented with controllable-polarity transistors. We propose a new fault model that suits the characteristics of these devices, and report the results of a SPICE-based analysis of the effects of ...

IEEE2015

Bipolar Conductance Switching of Single Anthradithiophene Molecules

Klaus Kern, Hagen Klauk, Uta Schlickum, Peter Wahl, Ivan Pentegov, Verena Katharina Schendel

Single molecular switches are basic device elements in organic electronics. The pentacene analogue anthradithiophene (ADT) shows a fully reversible binary switching between different adsorption conformations on a metallic surface accompanied by a charge tr ...

Amer Chemical Soc2015

Layout Technique for Double-Gate Silicon Nanowire FETs With an Efficient Sea-of-Tiles Architecture

Giovanni De Micheli, Shashi Kanth Bobba

As we advance into the era of nanotechnology, semiconductor devices are scaled down to their physical limits, thereby opening up venues for new transistor channel materials based on nanowires and nanotubes. Transistors based on nanowires and nanotubes inhe ...

Ieee-Inst Electrical Electronics Engineers Inc2015

Spice-compatible modeling of high injection and propagation of minority carriers in the substrate of Smart Power ICs

Maher Kayal, Jean-Michel Sallese, Camillo Stefanucci, Pietro Buccella

Classical substrate noise analysis considers the silicon resistivity of an integrated circuit only as doping dependent besides neglecting diffusion currents as well. In power circuits minority carriers are injected into the substrate and propagate by drift ...

Elsevier2015

A Low Power On-Chip Class-E Power Amplifier For Remotely Powered Implantable Sensor Systems

Catherine Dehollain, Enver Gürhan Kilinç, Kerim Türe

This paper presents a low power fully integrated class-E power amplifier and its integration with remotely powered sensor system. The class-E power amplifier is suitable solution for low-power applications due to its high power efficiency. However, the req ...

Spie-Int Soc Optical Engineering2015

Spintronic Majority Gates

Giovanni De Micheli, Pierre-Emmanuel Julien Marc Gaillardon, Luca Gaetano Amarù, Odysseas Zografos

In this paper we present an overview of two types of majority gate devices based on spintronic phenomena. We compare the spin torque majority gate and the spin wave majority gate and describe work on these devices. We discuss operating conditions for the t ...

2015

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Power semiconductor device

94-GHz Large-Signal Operation of AlInN/GaN High-Electron-Mobility Transistors on Silicon With Regrown Ohmic Contacts

Modeling Parasitic Vertical PNP in HVCMOS

On the Design of a Fault Tolerant Ripple-Carry Adder with Controllable-Polarity Transistors

Electrical and Magnetical Modeling of Inductive Coupled Power Transfer Systems

High-Power High-Voltage Isolated DC-DC Converters using an NPC Balanced Capacitive Divider

Bipolar Conductance Switching of Single Anthradithiophene Molecules

Layout Technique for Double-Gate Silicon Nanowire FETs With an Efficient Sea-of-Tiles Architecture

Spice-compatible modeling of high injection and propagation of minority carriers in the substrate of Smart Power ICs

A Low Power On-Chip Class-E Power Amplifier For Remotely Powered Implantable Sensor Systems

Spintronic Majority Gates

Graph Chatbot

Chattez avec Graph Search

Spice-compatible modeling of high injection and propagation of minority carriers in the substrate of Smart Power ICs

Spintronic Majority Gates

Modeling Parasitic Vertical PNP in HVCMOS

On the Design of a Fault Tolerant Ripple-Carry Adder with Controllable-Polarity Transistors

A Low Power On-Chip Class-E Power Amplifier For Remotely Powered Implantable Sensor Systems

Electrical and Magnetical Modeling of Inductive Coupled Power Transfer Systems

High-Power High-Voltage Isolated DC-DC Converters using an NPC Balanced Capacitive Divider

Bipolar Conductance Switching of Single Anthradithiophene Molecules

Layout Technique for Double-Gate Silicon Nanowire FETs With an Efficient Sea-of-Tiles Architecture