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We present results obtained both with scanning electron microscopy (SEM) in the cathodoluminescence (CL) mode and transmission electron microscopy (TEM) on ZnCdSe/ZnSe electron-beam-pumped laser structures. This investigation aims at establishing a relatio ...
Quantitative nondispersive cathodoluminescence (CL) measurements and dispersive CL experiments are performed at room temperature on n(+)-InP substrates as a function of the accelerating voltage (Eo). The results are explained in terms of band-to-band recom ...
We propose a method for the quantitative evaluation of electron-beam-induced current profiles measured in normal-collector geometry across p-n junctions in GaAs/Al0.4Ga0.6As heterostructures. We obtain a theoretical expression, valid for all distances from ...
We report on the realization of InGaAs-lnGaAsP separate confinement heterostructure multiple quantum well lasers grown by chemical beam epitaxy. We discuss key growth parameters and characterization by secondary-ion mass spectroscopy, transmission electron ...
In a recent paper we measured the lateral hole diffusion in a GaAs/AlGaAs single quantum well (SQW) by a novel method. At helium temperature, we estimate a lateral hole diffusion length in the QW of 1.5 mum. However, the assumption that diffusion takes pla ...
Microgun-pumped blue lasers with lasing thresholds in the 4-20 kW/cm(2) range for temperatures between 83 and 225 K were fabricated by molecular beam epitaxy. The devices exploit graded index, separate confinement Zn1-xCdxSe/ZnSe heterostructures and use a ...
We explore the defect distribution and the degradation in electron beam pumped Zn1-xCdxSe/ZnSe laser structures by combining cathodoluminescence measurements in a scanning electron microscope with transmission electron microscopy. We found that degradation ...
Two tensile-strained GaxIn1-xP / InP (001) heterostructures (with x = 6.5% and x = 11.2%) have been studied by TEM and cathodoluminescence. In both structures stacking faults and twins, located in the epilayer, have been found preferably along the [(1) ove ...
Improved Si1-xGex/Si hetero-epitaxy has been achieved by RTCVD in the presence of small amounts of C3H8 during growth. Carbon presumably scavenges oxygen and acts as a surfactant to inhibit three dimensional growth. ...
The cathodoluminescence mode of the scanning electron microscope is used for the first time to investigate the lateral dependence of the electron-hole pair generation by the electron beam of the scanning electron microscope m semiconducting material. A mul ...