Personne
Marc Ilegems
Publications associées (84)
Progress in AlInN-GaN Bragg reflectors: Application to a microcavity light emitting diode
Jean-François Carlin, Marc Ilegems, Julien Dorsaz
We report on the progress in the growth of highly reflective AlInN-GaN distributed Bragg reflectors deposited by metalorganic vapor phase epitaxy. Al1-xInxN layers with an In content around x similar to 0.17 are lattice-matched to GaN, thus avoiding strain ...
2005Recent progress in the growth of highly reflective nitride-based distributed Bragg reflectors and their use in microcavities
Nicolas Grandjean, Jean-François Carlin, Marc Ilegems, Raphaël Butté, Eric Feltin, Gabriel Christmann, Julien Dorsaz
The growth of highly-reflective nitride-based distributed Bragg reflectors (DBRs) and their use in vertical cavity structures is reviewed. We discuss the various nitride material systems employed to design Bragg mirrors and microcavities, namely the Al-x(G ...
2005Crack-free fully epitaxial nitride microcavity using highly reflective AllnN/GaN Bragg mirrors
Nicolas Grandjean, Jean-François Carlin, Marc Ilegems, Raphaël Butté, Eric Feltin, Julien Dorsaz
We report the growth over 2 in. sapphire substrates of crack-free fully epitaxial nitride-based microcavities using two highly reflective lattice-matched AlInN/GaN distributed Bragg reflectors (DBRs). The optical cavity is formed by an empty 3lambda/2 GaN ...
2005Lattice-matched distributed Bragg reflectors for nitride-based vertical cavity surface emitting lasers
Nicolas Grandjean, Jean-François Carlin, Marc Ilegems, Raphaël Butté, Eric Feltin, Julien Dorsaz
Very narrow spontaneous emission (Deltalambda similar to 0.5 nm), corresponding to a quality factor Q in excess of 800, has been obtained under continuous-wave excitation at room temperature with an AlInN/GaN monolithic microcavity. The structure is made o ...
2005Midinfrared intersubband absorption in lattice-matched AlInN/GaN multiple quantum wells
Nicolas Grandjean, Jean-François Carlin, Marc Ilegems, Raphaël Butté, Eric Feltin, Sylvain Nicolay, Mauro Mosca
We report the observation of midinfrared intersubband (ISB) absorption in nearly lattice-matched AlInN/GaN multiple-quantum-wells. A clear absorption peak is observed around 3 mu m involving transitions from the conduction band ground state to the first ex ...
2005Characterization of deep levels in n-GaN by combined capacitance transient techniques
Jean-François Carlin, Marc Ilegems, Marcel Py
Deep centers in undoped n-GaN grown by Hydride Vapor Phase Epitaxy were characterized by Deep Level Transient Spectroscopy (DLTS), revealing four known levels with activation energies in the range 0.17-0.94 eV. Deeper levels in the bandgap were observed by ...
2005InGaN/GaN resonant-cavity LED including an AlInN/GaN bragg mirror
Jean-François Carlin, Marc Ilegems, Julien Dorsaz
We report on the growth by metalorganic vapor phase epitaxy of a InGaN/GaN resonant-cavity light emitting diode (RCLED) emitting at 454 nm and incorporating a 12-pair Al0.82In0.18N/GaN distributed Bragg reflector as bottom mirror. A(1-x)In(x)N layers with ...
2004AlInN as high-index-contrast material for GaN-based optoelectronics
Jean-François Carlin, Marc Ilegems, Julien Dorsaz
High quality AlInN was grown near lattice-matched to GaN. It shows about 7% index contrast with GaN. AlInN is thus a promising alternative to AlGaN, as demonstrated by a 20-pairs AlInN/GaN distributed Bragg reflector with over 90% reflectivity. Light emitt ...
Ieee2004Control of polarization switching in vertical coupled-cavities surface emitting lasers
Jean-François Carlin, Marc Ilegems
We report a novel three-contact vertical-cavity surface-emitting laser (VCSEL) for use in polarization-sensitive optical applications. The device consists of two vertical cavities, coupled by a common mirror. We demonstrate that one can independently choos ...
2004Rate-equation model for coupled-cavity surface-emitting lasers
Jean-François Carlin, Marc Ilegems
We present a detailed theoretical study of a vertical-cavity surface-emitting laser (VCSEL) with two optically coupled, active cavities. The study is based on a rate-equation model written for carriers and photons under steady-state conditions. The model a ...
2004