Alexander Tagantsev

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Publications associées (131)

Single-domain (110) PbTiO3 thin films: Thermodynamic theory and experiments

Nava Setter, Alexander Tagantsev, Mahamudu Mtebwa, Brahim Dkhil

We report the thermodynamic potential for single-domain (110) thin films epitaxially grown on dissimilar cubic substrates. Using different sets of paraelectric phase elastic compliance coefficients of PbTiO3 single crystal, calculated from the experimental ...

Amer Physical Soc2016

Free-Carrier-Compensated Charged Domain Walls Produced with Super-Bandgap Illumination in Insulating Ferroelectrics

Nava Setter, Alexander Tagantsev, Dragan Damjanovic, Tomas Sluka, Petr Bednyakov

Charged domain walls in ferroelectrics are movable and electronically conducting interfaces inside insulating materials. A simple and reliable method for their artificial production with ultraviolet (UV) light is described. The UV illumination produces fre ...

Wiley-Blackwell2016

Velocity Control of 180 degrees Domain Walls in Ferroelectric Thin Films by Electrode Modification

Nava Setter, Alexander Tagantsev, Tomas Sluka, Petr Yudin, Ludwig Feigl

The velocity of individual 1800 domain walls in thin ferroelectric films of PbZr0.1Ti0.9O3 is strongly dependent on the thickness of the top Pt electrode made by electron-beam induced deposition (EBID). We show that when the thickness is varied in the rang ...

Amer Chemical Soc2016

Strong surface effect on direct bulk flexoelectric response in solids

Alexander Tagantsev

In the framework of a continuum theory, it is shown that the direct bulk flexoelectric response of a finite sample essentially depends on the surface polarization energy, even in the thermodynamic limit where the body size tends to infinity. It is found th ...

Amer Inst Physics2016

Polarization charge as a reconfigurable quasi-dopant in ferroelectric thin films

Nava Setter, Alexander Tagantsev, Tomas Sluka, Arnaud Robert André Crassous

Impurity elements used as dopants are essential to semiconductor technology for controlling the concentration of charge carriers. Their location in the semiconductor crystal is determined during the fabrication process and remains fixed. However, another p ...

Nature Publishing Group2015

Moving antiphase boundaries using an external electric field

Nava Setter, Alexander Tagantsev, Konstantin Shapovalov, Kaushik Vaideeswaran, Petr Yudin

Antiphase boundaries (APBs) are unique domain walls that may demonstrate switchable polarization in otherwise non-ferroelectric materials such as SrTiO3 and PbZrO3. The current study explores the possibility of displacing such domain walls at the nanoscale ...

Amer Inst Physics2015

Room temperature concurrent formation of ultra-dense arrays of ferroelectric domain walls

Nava Setter, Alexander Tagantsev, Petr Yudin, Ludwig Feigl, Mahamudu Mtebwa, Konstantin Shapovalov

Properties of ferroelectric domain walls are attractive for future nano- and optoelectronics. An important element is the potential to electrically erase/rewrite domain walls inside working devices. Dense domain wall patterns, formed upon cooling through t ...

American Institute of Physics2015

Phase transitions associated with competing order parameters in compressively strained SrTiO3 thin films

Alexander Tagantsev, Harry Joseph Trodahl

(100)-epitaxial SrTiO3 thin films having biaxial compressive strains up to -1.60% were grown on lattice mismatched substrates. Two phase transitions induced by the coupled instabilities (antiferrodistortive and ferroelectric) in SrTiO3 were revealed in a c ...

Amer Physical Soc2015

Effective-surface-energy approach for size effects in ferroics

Nava Setter, Alexander Tagantsev, Jin Wang

We present a simple approach enabling analytical treatments of size effects in ferroelectric samples of complicated shapes for the cases where long-range depolarizing effects are not involved. The key element of the approach is the presentation of the ener ...

American Physical Society2015

Suppressed polar distortion with enhanced Curie temperature in in-plane 90 degrees-domain structure of a-axis oriented PbTiO3 Film

Alexander Tagantsev

PbTiO3 thin films were epitaxially grown on (001) KTaO3 single crystal substrates by metalorganic chemical vapor deposition. The coherent epitaxial growth introduced a large in-plane tensile strain to the PbTiO3 film. This tensile strain increased T-C and ...

Amer Inst Physics2015

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Suppressed polar distortion with enhanced Curie temperature in in-plane 90 degrees-domain structure of a-axis oriented PbTiO3 Film

Alexander Tagantsev

Amer Inst Physics2015