Andras Kis

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2015− Associate professor, EPFL, STI, Institute of Electrical Engineering (IEL) and Materials Science and Engineering Institute (IMX) 2008−2015 Tenure-track assistant professor at EPFL, School of Engineering (STI), Institute of Electrical Engineering (IEL) 2004−2007 Postdoctoral researcher at the University of California, Berkeley, Physics Department in the group of Prof. Zettl 2000−2003 PhD student at EPFL, Faculty of basic sciences, Institute of physics of complex matter, group of Prof. Forró 1994−1999 MS, Physics, University of Zagreb, Croatia 1994 Baccalaureate, MIOC (Mathematical and Informational Educational Center) high school

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Dataset for the paper High durability and stability of 2D nanofluidic devices for long-term single-molecule sensing

Nianduo Cai, Andrey Chernev, Andras Kis, Martina Lihter, Michal Daniel Macha, Aleksandra Radenovic, Yunfei Teng, Mukeshchand Thakur, Mukesh Kumar Tripathi, Miao Zhang, Yanfei Zhao

Information regarding the Dataset, corresponding to the paper: “Thakur, M., Cai, N., Zhang, M. et al. High durability and stability of 2D nanofluidic devices for long-term single-molecule sensing. npj 2D Mater Appl 7, 11 (2023). https://doi.org/10.1038/s41699-023-00373-5” This folder contains the raw data and complete package of codes used to analyze, view, save, and plot data for the publication titled "High durability and stability of 2D nanofluidic devices for long-term single-molecule sensing". The code folder, "OpenNanopore-nanopore-tools", can be used to plot raw data which corresponds to the figures in the paper and supplementary information.

EPFL Infoscience2023

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Electrical control of hybrid exciton transport in a van der Waals heterostructure

Andras Kis, Edoardo Lopriore, Gabriele Pasquale, Zhe Sun, Fedele Tagarelli

2023

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Defects in solids are unavoidable and can create complex electronic states that can significantly influence the electrical and optical properties of semiconductors. With the rapid progress in the integration of 2D semiconductors in practical devices, it is imperative to understand and characterize the influence of defects in this class of materials. Here, we examine the electrical response of defect filling and emission using deep level transient spectroscopy (DLTS) and reveal defect states and their hybridization in a monolayer MOCVD-grown material deposited on CMOS-compatible substrates. Supported by aberration-corrected STEM imaging and theoretical calculations, we find that neighboring sulfur vacancy pairs introduce additional shallow trap states via hybridization of individual vacancy levels. Even though such vacancy pairs only represent ~10% of the total defect concentration, they can have a substantial influence on the off currents and switching slopes of field-effect transistors based on 2D semiconductors. Our technique, which can quantify the energy states of different defects and their interactions, allows rapid and nondestructive electrical characterization of defect states important for the defect engineering of 2D semiconductors.

2023

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