Luca De Michielis

Cette personne n’est plus à l’EPFL

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Publications associées (26)

The electron–hole bilayer tunnel FET

Mihai Adrian Ionescu, Luca De Michielis, Livio Lattanzio

We propose a novel tunnel field-effect transistor (TFET) concept called the electron–hole bilayer TFET (EHBTFET). This device exploits the carrier tunneling through a bias-induced electron–hole bilayer in order to achieve improved switching and higher driv ...

Elsevier2012

Understanding the Superlinear Onset of Tunnel-FET Output Characteristic

Mihai Adrian Ionescu, Luca De Michielis, Livio Lattanzio

In this letter, we report that the source and channel Fermi-Dirac distributions in interband-tunneling-controlled transistors play a fundamental role on the modulation of the injected current. We explain the superlinear onset of the output characteristics ...

Institute of Electrical and Electronics Engineers2012

Complementary Germanium Electron-Hole Bilayer Tunnel FET for Sub-0.5-V Operation

Mihai Adrian Ionescu, Luca De Michielis, Livio Lattanzio

In this paper we present a novel device, the Germanium Electron-Hole Bilayer Tunnel FET (Ge EHBTFET), which exploits carrier tunneling through a bias-induced electron-hole bilayer. The proposed architecture provides a quasi-ideal alignment between the tunn ...

Institute of Electrical and Electronics Engineers2012

Beyond Scaling : Physics and Modeling for Pushing the Frontiers of Low-Power Devices

Luca De Michielis

Over the recent decades, the balance between increasing the complexity of computer chips and simultaneously reducing cost per bit has been accommodated by down-scaling. While extremely successful in the past, this approach now faces grave limitations leadi ...

EPFL2012

Effect of the choice of the tunnelling path on semi-classical numerical simulations of TFET devices

Mihai Adrian Ionescu, Luca De Michielis, Pierpaolo Palestri, Luca Selmi

In this work a non-local band-to-band tunnelling model has been successfully implemented into a fullband Monte Carlo simulator and applied to Tunnel-FET devices. No stability or statistical noise problems were encountered in spite of particle weights rangi ...

Elsevier2011

Tunneling path impact on semi-classical numerical simulations of TFET devices

Mihai Adrian Ionescu, Luca De Michielis, Pierpaolo Palestri, Luca Selmi

In this work a non-local band-to-band tunnelling model has been implemented into a full-band Monte Carlo simulator. Two different approaches for the choice of the tunnelling path have been implemented and their impact on the transfer characteristics of dif ...

IEEE2011

Tunnel-FET architecture with improved performance due to enhanced gate modulation of the tunneling barrier

Mihai Adrian Ionescu, Luca De Michielis, Livio Lattanzio, Pierpaolo Palestri, Luca Selmi

The Tunnel-FET (TFET) device is a gated reverse biased p-i-n junction whose working principle is based on the quantum mechanical Band-to-Band Tunneling (B2BT) mechanism [1]. The OFF-ON transition can be much more abrupt than for conventional MOSFETs, thus ...

IEEE2011

Ultra low power: Emerging devices and their benefits for integrated circuits

Mihai Adrian Ionescu, Luca De Michielis, Alexandru Rusu, Ji Cao, Giovanni Antonio Salvatore, Sebastian Thimotee Bartsch, Nilay Dagtekin

In this paper we analyze and discuss the characteristics and expected benefits of some emerging device categories for ultra low power integrated circuits. First, we focus on two categories of sub-thermal subthreshold swing switches Tunnel FETs and Negative ...

IEEE2011

Electron-hole bilayer tunnel FET for steep subthreshold swing and improved ON current

Mihai Adrian Ionescu, Luca De Michielis, Livio Lattanzio

We propose a novel Tunnel field-effect transistor (TFET) concept called the electron-hole bilayer TFET (EHBTFET). This device exploits the carrier tunneling through a bias-induced electron-hole bilayer in order to achieve improved switching and higher driv ...

IEEE2011

Corner Effect and Local Volume Inversion in SiNW FETs

Mihai Adrian Ionescu, Kirsten Emilie Moselund, Luca De Michielis, Luca Selmi

In this paper, a quantitative study of the corner effect and of the local volume inversion on gate-all-around MOSFETs based on numerical simulations has been carried out; different angles and doping levels are compared, in order to understand the impact of ...

Institute of Electrical and Electronics Engineers2011

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