We present a high-speed CMOS integrated magnetic angle sensor consisting of two 8-contact circular vertical Hall devices (CVHD). The biasing and sensing of the Hall voltage is rotated clockwise for the first device, and counter clockwise for the second one ...
Hall-effect devices make up by far the largest part of all magnetic sensors on the market today. The main reason is compatibility of Hall devices with modern semiconductor technology. In particular, integrated Hall sensor micro-systems fabricated in low-co ...
In this article, a low-voltage complementary metal-oxide semiconductor (CMOS) input signal adapter (ISA) suitable for input rail-to-rail operation of various types of analogue basic building blocks is presented. The adapter acts as a pre-stage with infinit ...
A miniaturized circular vertical Hall device with 8 contacts was studied in terms of its sensitivity, biasing topologies and residual offset. The geometry accounts for about 30% lower sensitivity, but offers the possibility of biasing the whole device in a ...
A magnetic field sensor for measuring a direction of a magnetic field in a plane comprises two sensing structures (1A 1B) that can be operated as a rotating Hall element. The two Hall elements are rotated in discrete steps in opposite directions. Such a ma ...
Series connected (stacked) CMOS vertical Hall devices were analyzed on the basis of performance of a single five contacts device biased at different common mode voltages with respect to the substrate. The uneven influence of junction field effect on residu ...
Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2008
