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Cem Alper

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Publications associées (27)

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A charge sensing device for sensing charge variations in a charge storage area includes: a TFET having at least one sense gate; and a capacitive coupling for coupling the charge storage area with the sense gate. ...

2019

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In this paper we will present and discuss the potential of steep slope transistors to serve at cryogenic temperature: (i) the electronic design that is needed for qubit error correction and/or interfacing and (ii) to serve as ultra-sensitive charge detecto ...

IEEE2018

Benchmarking of Homojunction Strained-Si NW Tunnel FETs for Basic Analog Functions

Mihai Adrian Ionescu, Cem Alper, Arnab Biswas, Florin Udrea

This paper reports a compact ambipolar model for homojunction strained-silicon (sSi) nanowire (NW) tunnel FETs (TFETs) capable of accurately describing both I-V and G-V characteristics in all regimes of operation, n- and p-ambipolarity, the superlinear ons ...

Institute of Electrical and Electronics Engineers2017

The semiconductor industry, governed by the Moore's law, has achieved the almost unbelievable feat of exponentially increasing performance while lowering the costs for years. The main enabler for this achievement has been the scaling of the CMOS transistor ...

EPFL2017

A Steep-Slope Transistor Combining Phase-Change and Band-to-Band-Tunneling to Achieve a sub-Unity Body Factor

Mihai Adrian Ionescu, Anna Krammer, Teodor Rosca, Josef Andreas Schuler, Wolfgang Amadeus Vitale, Cem Alper, Arnab Biswas, Emanuele Andrea Casu, Qun Zhao

Steep-slope transistors allow to scale down the supply voltage and the energy per computed bit of information as compared to conventional field-effect transistors (FETs), due to their sub-60 mV/decade subthreshold swing at room temperature. Currently pursu ...

Nature Publishing Group2017

Underlap counterdoping as an efficient means to suppress lateral leakage in the electron–hole bilayer tunnel FET

Mihai Adrian Ionescu, Cem Alper, José Luis Padilla de la Torre, Pierpaolo Palestri

The electron-hole bilayer tunnel (EHBTFET). has been proposed as a density of states (DOS) switch capable of achieving a subthreshold slope lower than 60mV/decade at room temperature; however, one of the main challenges is the control of the lateral band-t ...

Institute of Physics2016

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In this work, we analyze the behavior of the band-to-band tunneling distance between electron and hole subbands resulting from field-induced quantum confinement in the heterogate electron-hole bilayer tunnel field-effect transistor. We show that, analogous ...

Amer Inst Physics2016

The Electron-Hole Bilayer TFET: Dimensionality Effects and Optimization

Mihai Adrian Ionescu, Cem Alper, José Luis Padilla de la Torre, Pierpaolo Palestri

An extensive parameter analysis is performed on the electron-hole bilayer tunnel field-effect transistor (EHBTFET) using a 1-D effective mass Schrodinger-Poisson solver with corrections for band non-parabolicity considering thin InAs, In0.53Ga0.47As, Ge, S ...

Institute of Electrical and Electronics Engineers2016

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Switching behavior in electron-hole bilayer tunnel FETs is known to be unaffected by the subthreshold swing limitation of 60 mV/decade imposed by thermal injection, due to the band-to-band tunneling phenomena on which they rely. However, in this paper, we ...

Institute of Electrical and Electronics Engineers2016

Assessment of Confinement-Induced Band-to-Band Tunneling Leakage in the FinEHBTFET

Mihai Adrian Ionescu, Cem Alper, José Luis Padilla de la Torre

In conventional planar EHBTFETs, the interband tunneling phenomena responsible for the drive current takes place vertically in the section of the channel where top and bottom gates overlap. As a result, the horizontal extent of this overlapping between gat ...

Ieee2016