Publications de Heike Riel | EPFL Graph Search

Quantum Dots Array on Ultra-Thin SOI Nanowires with Ferromagnetic Cobalt Barrier Gates for Enhanced Spin Qubit Control

Pasquale Scarlino, Fabian Oppliger, Michele Ghini, Heike Riel

In this work we propose and demonstrate the integration of ferromagnetic nanosized cobalt barrier gates in quantum dots arrays on ultra-thin fully-depleted Silicon-On-Insulator (SOI) nanowires. This innovative structure enhances both driving and addressabi ...

IEEE2023

Dopant-Induced Modifications of GaxIn(1-x)P Nanowire-Based p-n Junctions Monolithically Integrated on Si(111)

Anna Fontcuberta i Morral, Kirsten Emilie Moselund, Luca Francaviglia, Rolf Erni, Heike Riel, Nicolas Bologna

Today, silicon is the most used material in photovoltaics, with the maximum conversion efficiency getting very close to the Shockley-Queisser limit for single-junction devices. Integrating silicon with higher band-gap ternary III-V absorbers is the path to ...

2018

An innovative band-to-band tunneling analytical model and implications in compact modeling of tunneling-based devices

Mihai Adrian Ionescu, Luca De Michielis, Livio Lattanzio, Arnab Biswas, Nilay Dagtekin, Luca Selmi, Heike Riel

In this paper, an analytical band-to-band tunneling model is proposed, validated by means of drift-diffusion simulation and comparison with experimental data, implemented in Verilog-A, and finally proven with SPICE simulator through simulation of circuits ...

American Institute of Physics2013

Tunneling and Occupancy Probabilities: How Do They Affect Tunnel-FET Behavior?

Mihai Adrian Ionescu, Kirsten Emilie Moselund, Luca De Michielis, Livio Lattanzio, Heike Riel

In this letter, the occupancy and tunneling probabilities of interband tunneling devices are studied, pointing out the fundamental function of the source Fermi-Dirac distribution. Particularly, the reason for the degraded subthreshold swing, which is typic ...

Institute of Electrical and Electronics Engineers2013

Tunnel field-effect transistors as energy-efficient electronic switches

Mihai Adrian Ionescu, Heike Riel

Power dissipation is a fundamental problem for nanoelectronic circuits. Scaling the supply voltage reduces the energy needed for switching, but the field-effect transistors (FETs) in today's integrated circuits require at least 60 mV of gate voltage to inc ...

2011