Publications de Martin George Friedl

Selective area epitaxy of GaAs: the unintuitive role of feature size and pitch

Anna Fontcuberta i Morral, Lucas Güniat, Didem Dede, Valerio Piazza, Martin George Friedl, Elif Nur Dayi, Nicholas Paul Morgan, Akshay Balgarkashi, Vladimir Dubrovskii

Selective area epitaxy (SAE) provides the path for scalable fabrication of semiconductor nanostructures in a device-compatible configuration. In the current paradigm, SAE is understood as localized epitaxy, and is modelled by combining planar and self-asse ...

IOP Publishing Ltd2022

Facet-driven formation of axial and radial In(Ga)As clusters in GaAs nanowires

Anna Fontcuberta i Morral, Lucas Güniat, Santhanu Panikar Ramanandan, Didem Dede, Martin George Friedl, Jean-Baptiste Leran, Wonjong Kim, Nicolas Tappy, Akshay Balgarkashi

Embedding quantum dots in nanowires (NWs) constitutes one promising building block for quantum photonic technologies. Earlier attempts to grow InAs quantum dots on GaAs nanowires were based on the Stranski-Krastanov growth mechanism. Here, we propose a nov ...

2020

Towards defect-free thin films of the earth-abundant absorber zinc phosphide by nanopatterning

Anna Fontcuberta i Morral, Elias Zsolt Stutz, Simon Robert Escobar Steinvall, Valerio Piazza, Martin George Friedl, Jean-Baptiste Leran, Mahdi Zamani, Rajrupa Paul, Reza Zamani

Large-scale deployment of thin-film photovoltaics will be facilitatedthrough earth-abundant components. Herein, selective area epitaxyand lateral overgrowth epitaxy are explored for the growth of zincphosphide (Zn3P2), a promising earth-abundant absorber. ...

2021

GaAs nanoscale membranes: prospects for seamless integration of III-Vs on silicon

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Martin George Friedl, Luca Francaviglia, Nicholas Paul Morgan, Vladimir Dubrovskii, Sara Marti Sanchez, Andres Maria Raya Bejarano

The growth of compound semiconductors on silicon has been widely sought after for decades, but reliable methods for defect-free combination of these materials have remained elusive. Recently, interconnected GaAs nanoscale membranes have been used as templa ...

2020

Dataset for "Towards defect-free thin films of the earth-abundant absorber zinc phosphide by nanopatterning"

Anna Fontcuberta i Morral, Elias Zsolt Stutz, Valerio Piazza, Martin George Friedl, Jean-Baptiste Leran, Mahdi Zamani, Simon Robert Escobar Steinvall, Rajrupa Paul, Reza Zamani

Raw data associated with the publication "Towards defect-free thin films of the earth-abundant absorber zinc phosphide by nanopatterning", first published in Nanoscale Advances on the 23nd November 2020. ...

Zenodo2020

3D Ordering at the Liquid-Solid Polar Interface of Nanowires

Anna Fontcuberta i Morral, Michele Ceriotti, Cécile Hébert, Duncan Thomas Lindsay Alexander, Gözde Tütüncüoglu, Martin George Friedl, Luca Francaviglia, Mahdi Zamani, Nicolas Tappy, Giulio Imbalzano

The nature of the liquid-solid interface determines the characteristics of a variety of physical phenomena, including catalysis, electrochemistry, lubrication, and crystal growth. Most of the established models for crystal growth are based on macroscopic t ...

Wiley2020

Remote Doping of Scalable Nanowire Branches

Anna Fontcuberta i Morral, Lucas Güniat, Didem Dede, Martin George Friedl, Wonjong Kim, Nicholas Paul Morgan

Selective-area epitaxy provides a path toward high crystal quality, scalable, complex nanowire networks. These high-quality networks could be used in topological quantum computing as well as in ultrafast photodetection schemes. Control of the carrier densi ...

2020

Facet-driven formation of axial and radial In(Ga)As clusters in GaAs nanowires

Anna Fontcuberta i Morral, Lucas Güniat, Santhanu Panikar Ramanandan, Didem Dede, Martin George Friedl, Jean-Baptiste Leran, Wonjong Kim, Nicolas Tappy, Nicholas Paul Morgan, Akshay Balgarkashi

Raw dataset and image files used for the publication ...

2020

Scalable Nanowire Networks: Growth and Functionality

Martin George Friedl

With the rise of quantum computing and recent experiments into topological quantum computers come exciting new opportunities for III-V semiconductor quantum nanostructures. In this thesis, we explore the scalable fabrication of patterned arrays and branche ...

EPFL2020

Fundamental aspects to localize self-catalyzed III-V nanowires on silicon

Anna Fontcuberta i Morral, Martin George Friedl, Heidi Andrea Potts, Wonjong Kim, Jelena Vukajlovic Plestina, Lea Ghisalberti, Vladimir Dubrovskii, William Craig Carter

III-V semiconductor nanowires deterministically placed on top of silicon electronic platform would open many avenues in silicon-based photonics, quantum technologies and energy harvesting. For this to become a reality, gold-free site-selected growth is nec ...

Nature Research2019