Publications de Mauro Fanciulli

Hidden bulk and surface effects in the spin polarization of the nodal-line semimetal ZrSiTe

Marco Grioni, Arnaud Magrez, Oleg Yazyev, Daniel Gosalbez Martinez, Helmuth Berger, Alberto Crepaldi, Mauro Fanciulli, Gianmarco Gatti, Silvan Dino Marcos Roth

Local inversion symmetry breaking in centrosymmetric materials can lead to large spin polarization of the electronic band structure in separate sectors of the unit cell. Here, the authors reveal such hidden spin polarisation in ZrSiTe using spin and angle ...

NATURE RESEARCH2021

Triple-Point Fermions in Ferroelectric GeTe

Jan Hugo Dil, Mauro Fanciulli, Marco Caputo, Houke Chen

2021

Radial Spin Texture of the Weyl Fermions in Chiral Tellurium

Majed Chergui, Henrik Moodysson Rønnow, Marco Grioni, Oleg Yazyev, Luc Testa, Daniel Gosalbez Martinez, Michele Puppin, Philippe Bugnon, Luca Moreschini, Alberto Crepaldi

Trigonal tellurium, a small-gap semiconductor with pronounced magneto-electric and magneto-optical responses, is among the simplest realizations of a chiral crystal. We have studied by spin- and angle-resolved photoelectron spectroscopy its unconventional ...

AMER PHYSICAL SOC2020

Fully spin-polarized bulk states in ferroelectric GeTe

Jan Hugo Dil, Mauro Fanciulli

By measuring the spin polarization of GeTe films as a function of light polarization we observed that the bulk states are fully spin polarized in the initial state, in strong contrast with observations for other systems with a strong spin-orbit interaction ...

2020

Single spin-polarized Fermi surface in SrTiO3 thin films

Jan Hugo Dil, Stefan Peter Muff, Mauro Fanciulli, Andrew Patton Weber, Marco Caputo, Zheng Wang

2020

Improvement of Mott spin polarimeters: An overlooked redundancy

Mauro Fanciulli

In Mott polarimeters, the measurement of the spin polarization of an electron beam along two perpendicular quantization axes is commonly performed by collecting scattered electrons with four independent detectors placed azimuthally at 90 degrees from each ...

2020

Towards Oxide Electronics: a Roadmap

Ulf Anders Hagfeldt, Francisco Sanchez, Mauro Fanciulli, Monica Marcela Lira Cantu, Brahim Dkhil

At the end of a rush lasting over half a century, in which CMOS technology has been experiencing a constant and breathtaking increase of device speed and density, Moore's law is approaching the insurmountable barrier given by the ultimate atomic nature of ...

2019

Formation of Sn-Induced Nanowires on Si(557)

Jan Hugo Dil, Mauro Fanciulli, Andrew Patton Weber

2019

Observation of a two-dimensional electron gas at CaTiO3 film surfaces

Jan Hugo Dil, Stefan Peter Muff, Mauro Fanciulli, Andrew Patton Weber, Zoran Ristic, Zheng Wang

The two-dimensional electron gas at the surface of titanates gathered attention due to its potential to replace conventional silicon based semiconductors in the future. In this study, we investigated films of the parent perovskite CaTiO3, grown by pulsed l ...

Elsevier Science Bv2018

Universal scattering response across the type-II Weyl semimetal phase diagram

Arnaud Magrez, Jan Hugo Dil, Helmuth Berger, Philippe Bugnon, Stefan Peter Muff, Mauro Fanciulli, Andrew Patton Weber

2018