Elison de Nazareth Matioli, Bin Lu
We demonstrate ultralow leakage current AlGaN/GaN Schottky-barrier diodes (SBDs) based on a 3-D anode contact. In contrast to conventional AlGaN/GaN SBDs, this new device forms a Schottky contact directly to the 2-D electron gas (2-DEG) at the sidewalls of ...
Ieee-Inst Electrical Electronics Engineers Inc2013