Reza Soleiman Zadeh Ardebili

Cette personne n’est plus à l’EPFL

Publications associées (17)

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High-Accuracy Calibration-Free Calorimeter for the Measurement of Low Power Losses

Elison de Nazareth Matioli, Remco Franciscus Peter van Erp, Enea Figini, Armin Jafari, Reza Soleiman Zadeh Ardebili, Mohammad Samizadeh Nikooytabalvandani, Furkan Karakaya, Michaël Heijnemans

Wide-band-gap technologies enable ultra-high efficiencies in high-frequency power conversion. However, inadequate accuracies in electrical measurements could lead to spurious efficiency measurements, even above 100%. Furthermore, bandwidth limitations, par ...

2020

Analysis of Output Capacitance Co-Energy and Discharge Losses in Hard-Switched FETs

Elison de Nazareth Matioli, Remco Franciscus Peter van Erp, Palliyage Srilak Nirmana Perera, Georgios Kampitsis, Reza Soleiman Zadeh Ardebili

The important distinction between stored energy and co-energy components of the output capacitance of field-effect transistors (FETs) is not explicitly discussed in the literature, and hence, less understood in relation to the switching losses in power ele ...

IEEE2020

Embedded Microchannel Cooling for High Power-Density GaN-on-Si Power Integrated Circuits

Elison de Nazareth Matioli, Remco Franciscus Peter van Erp, Luca Nela, Georgios Kampitsis, Reza Soleiman Zadeh Ardebili

In this work, we demonstrate a new thermal management approach for direct cooling of GaN-on-Si power integrated circuits (ICs), in which the Si substrate functions as a microfluidic heat sink, turning Si into a cost-effective, high thermal performance subs ...

IEEE2020

Comparison of Wide-band-gap Technologies for Soft-Switching Losses at High Frequencies

Elison de Nazareth Matioli, Halil Kerim Yildirim, Armin Jafari, Palliyage Srilak Nirmana Perera, Reza Soleiman Zadeh Ardebili, Mohammad Samizadeh Nikooytabalvandani, Furkan Karakaya

Soft-switching power converters based on wide-band-gap (WBG) transistors offer superior efficiency and power density advantages. However, at high frequencies, loss behavior varies significantly between different WBG technologies. This includes losses relat ...

2020

H-terminated polycrystalline diamond p-channel transistors on GaN-on-Silicon

Elison de Nazareth Matioli, Remco Franciscus Peter van Erp, Riyaz Mohammed Abdul Khadar, Reza Soleiman Zadeh Ardebili, Mehdi Naamoun

In many semiconductor technologies, including GaN, the lack of p-channel devices is a major obstacle for complementary operations. Here, we demonstrate high-performance polycrystalline diamond p-channel transistors on GaN-on-Si. Following the optimization ...

Institute of Electrical and Electronics Engineers2019

High performance Fully-vertical GaN-on-Si power MOSFETs

Elison de Nazareth Matioli, Chao Liu, Reza Soleiman Zadeh Ardebili

We report the first demonstration of fully-vertical power MOSFETs on 6.6-μm-thick GaN grown on a 6-inch Si substrate by metal-organic chemical vapor deposition (MOCVD). A robust fabrication method was developed based on a selective and local removal of the ...

IEEE2019

Near-junction heat spreaders for hot spot thermal management of high power density electronic devices

Elison de Nazareth Matioli, Remco Franciscus Peter van Erp, Riyaz Mohammed Abdul Khadar, Reza Soleiman Zadeh Ardebili, Mehdi Naamoun

Many high power (opto-) electronic devices such as transistors, diodes, and lasers suffer from significant hot spot temperature rises due to the high heat fluxes generated in their active area, which limits their performance, reliability, and lifetime. Emp ...

2019

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