Mihai Adrian Ionescu, Luca De Michielis, Livio Lattanzio, Pierpaolo Palestri, Luca Selmi
The Tunnel-FET (TFET) device is a gated reverse biased p-i-n junction whose working principle is based on the quantum mechanical Band-to-Band Tunneling (B2BT) mechanism [1]. The OFF-ON transition can be much more abrupt than for conventional MOSFETs, thus ...
IEEE2011