Publications de Eamon Patrick O'Connor

Negative Capacitance in HfO2 Gate Stack Structures With and Without Metal Interlayer

Mihai Adrian Ionescu, Igor Stolichnov, Ali Saeidi, Eamon Patrick O'Connor, Francesco Bellando, Matteo Cavalieri, Carlotta Gastaldi

In this work, we experimentally explore and compare FET gate stacks with and without an inner metal plane between a linear dielectric (SiO2) and a ferroelectric layer (Si-doped HfO2) operating in the negative capacitance (NC) regime. The use of nanosecond- ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Intrinsic switching in Si-doped HfO2: A study of Curie-Weiss law and its implications for negative capacitance field-effect transistor

Mihai Adrian Ionescu, Igor Stolichnov, Ali Saeidi, Teodor Rosca, Eamon Patrick O'Connor, Matteo Cavalieri, Carlotta Gastaldi, Sadegh Kamaei Bahmaei

HfO2-based ferroelectrics are considered a promising class of materials for logic and memory applications due to their CMOS compatibility and ferroelectric figures of merit. A steep-slope field-effect-transistor (FET) switch is a device for logic applicati ...

AMER INST PHYSICS2021

Experimental Investigation of Pulsed Laser Deposition of Ferroelectric Gd:HfO2 in a CMOS BEOL Compatible Process

Mihai Adrian Ionescu, Igor Stolichnov, Eamon Patrick O'Connor, Matteo Cavalieri, Carlotta Gastaldi

In this work, we report an experimental investigation of pulsed laser deposition (PLD) of thin Gd:HfO2 layers at 330 degrees C, which show ferroelectric behavior after annealing at 450 degrees C, compatible with complementary metal-oxide-semiconductor back ...

AMER CHEMICAL SOC2020

Stabilization of ferroelectric HfxZr1-xO2 films using a millisecond flash lamp annealing technique

Eamon Patrick O'Connor, Stefan Abel

We report on the stabilization of ferroelectric HfxZr1-xO2 (HZO) films crystallized using a low thermal budget millisecond flash lamp annealing technique. Utilizing a 120 s 375 degrees C preheat step combined with millisecond flash lamp pulses, ferroelectr ...

2018