Publications de Santhanu Panikar Ramanandan

Gate-Tunable Hole Transport in In-Plane Ge Nanowires by V-Groove Confined Selective Epitaxy

Anna Fontcuberta i Morral, Alok Rudra, Santhanu Panikar Ramanandan, Victor Carle Adrien Boureau

Germanium (Ge) nanowires hold great promise as building blocks for hole spin-based quantum processors. Realizing this potential requires their direct integration onto silicon (Si) wafers. This work introduces V-groove-confined selective epitaxy to enable t ...

WILEY-V C H VERLAG GMBH2025

Data set for Gate-Tunable Hole Transport in In-Plane Ge Nanowires by V-Groove Confined Selective Epitaxy

Santhanu Panikar Ramanandan

This folder contains all the raw and processed data used for the manuscript titled: Gate-Tunable Hole Transport in In-Plane Ge Nanowires by V-Groove Confined Selective Epitaxy ...

Zenodo2025

On-chip Germanium nanowires for hole spin qubits

Santhanu Panikar Ramanandan

The creation of a universal quantum computer that can solve complex problems beyond the reach of classical computers - the so-called "quantum supremacy" - is an open challenge. For this to become a reality, a large number of qubits should be integrated in ...

EPFL2025

PRACTISING ETHICS IN ENGINEERING AND SCIENCE EDUCATION

Santhanu Panikar Ramanandan, Laura Filippa Ferrarello, Jaïr Kees Evert Karel Campfens

Technological advancements are expanding continuously to affect more private, societal, and environmental aspects of our lives. This raises a serious need to equip those who lead and build such technologies with the skills that apply ethical principles to ...

2024

Control of Ge island coalescence for the formation of nanowires on silicon

Anna Fontcuberta i Morral, Alok Rudra, Santhanu Panikar Ramanandan

Germanium nanowires could be the building blocks of hole-spin qubit quantum computers. Selective area epitaxy enables the direct integration of Ge nanowires on a silicon chip while controlling the device design, density, and scalability. For this to become ...

2024

Data set for control of Ge island coalescence for the formation of nanowires on silicon

Anna Fontcuberta i Morral, Alok Rudra, Santhanu Panikar Ramanandan, Joel René Sapera, Vladimir Dubrovskii, Sara Marti Sanchez

This document contains all the data and the details of the analysis used in the manuscript titled " Control of Ge island coalescence for the formation of nanowires on silicon." https://doi.org/10.1039/D3NH00573A ...

EPFL Infoscience2024

The implementation of thermal and UV nanoimprint lithography for selective area epitaxy

Anna Fontcuberta i Morral, Alok Rudra, Santhanu Panikar Ramanandan, Didem Dede, Valerio Piazza, Nicholas Paul Morgan

Semiconductor nanowires (NWs) in horizontal configuration could provide a path for scalable NW-based devices. Bottom-up large-scale manufacturing of these nanostructures by selective area epitaxy (SAE) relies on precise nanopatterning of various shapes on ...

2023

Understanding the growth mechanism of BaZrS3 chalcogenide perovskite thin films from sulfurized oxide precursors

Anna Fontcuberta i Morral, Elias Zsolt Stutz, Andrea Giunto, Santhanu Panikar Ramanandan, Mirjana Dimitrievska, Iléane Tiphaine Françoise Marie Lefevre

Barium zirconium sulfide (BaZrS3) is an earth-abundant and environmentally friendly chalcogenide perovskite with promising properties for various energy conversion applications. Recently, sulfurization of oxide precursors has been suggested as a viable sol ...

IOP Publishing Ltd2023

Coherent Hole Transport in Selective Area Grown Ge Nanowire Networks

Anna Fontcuberta i Morral, Alok Rudra, Andrea Giunto, Santhanu Panikar Ramanandan, Nicholas Paul Morgan

Holes in germanium nanowires have emerged as a realistic platform for quantum computing based on spin qubit logic. On top of the large spin–orbit coupling that allows fast qubit operation, nanowire geometry and orientation can be tuned to cancel out charge ...

American Chemical Society (ACS)2022

Raman tensor of zinc-phosphide (Zn3P2): from polarization measurements to simulation of Raman spectra

Anna Fontcuberta i Morral, Elias Zsolt Stutz, Santhanu Panikar Ramanandan, Mischa Samuel Flór, Jean-Baptiste Leran, Mahdi Zamani, Rajrupa Paul, Mirjana Dimitrievska

Zinc phosphide (Zn3P2) is a II–V compound semiconductor with promising photovoltaic and thermoelectric applications. Its complex structure is susceptible to facile defect formation, which plays a key role in further optimization of the material. Raman spec ...

2022