Publications de Halil Kerim Yildirim

High voltage arbitrary waveform generator

High voltage arbitrary waveform generator (1) comprising: - a voltage-controlled oscillator (3) arranged to output a clock signal (CLK) and an inverted clock signal (Formula (I)) at a frequency determined by at least one control voltage (Formula (II)); - a ...

2024

Photonic-electronic integrated circuit-based coherent LiDAR engine

Edoardo Charbon, Tobias Kippenberg, Xinru Ji, Zheru Qiu, Grigorii Likhachev, Halil Kerim Yildirim, Andrea Bancora, Anton Lukashchuk, Andrey Voloshin

Chip-scale integration is a key enabler for the deployment of photonic technologies. Coherent laser ranging or FMCW LiDAR, a perception technology that benefits from instantaneous velocity and distance detection, eye-safe operation, long-range, and immunit ...

Nature Portfolio2024

High-Performance Enhancement-Mode AlGaN/GaN Multi-Channel Power Transistors

Elison de Nazareth Matioli, Remco Franciscus Peter van Erp, Halil Kerim Yildirim, Jun Ma, Luca Nela, Catherine Erine

AlGaN/GaN devices have shown outstanding potential for power conversion applications. However, despite the recent progress, their performance is still far from what the material can offer in terms of on-resistance and breakdown voltage. To address this cha ...

IEEE2021

Comparison of Wide-Band-Gap Technologies for Soft-Switching Losses at High Frequencies (vol 35, pg 12595, 2020)

Elison de Nazareth Matioli, Halil Kerim Yildirim, Armin Jafari, Palliyage Srilak Nirmana Perera, Reza Soleiman Zadeh Ardebili, Mohammad Samizadeh Nikooytabalvandani

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2021

Investigation on Output Capacitance Losses in Superjunction and GaN-on-Si Power Transistors

Elison de Nazareth Matioli, Halil Kerim Yildirim, Armin Jafari, Palliyage Srilak Nirmana Perera, Mohammad Samizadeh Nikooytabalvandani

Low ON-resistance of advanced superjunction (SJ) and GaN-on-Si transistors is of great importance in power converters, however, the anomalous loss in their output capacitance (C OSS ) severely limits their performance. In this work, we use an energy-orient ...

IEEE2021

High-Frequency GaN-on-Si power integrated circuits based on Tri-Anode SBDs

Elison de Nazareth Matioli, Remco Franciscus Peter van Erp, Jun Ma, Halil Kerim Yildirim, Luca Nela, Georgios Kampitsis

In this work, we report on the switching performance of AlGaN/GaN lateral Tri-Anode SBDs. The Tri-Anode architecture leads to a more than 50% reduction in the device charge with respect to conventional planar structure, confirmed both by capacitive and rev ...

IEEE2020

Conformal Passivation of Multi-Channel GaN Power Transistors for Reduced Current Collapse

Elison de Nazareth Matioli, Remco Franciscus Peter van Erp, Halil Kerim Yildirim, Luca Nela, Catherine Erine, Kai Cheng

Multi-channel power devices, in which several AlGaN/GaN layers are stacked to achieve multiple two-dimensional electron gases (2DEGs), have recently led to a significant increase in the device conductivity while maintaining high breakdown voltage, resultin ...

Institute of Electrical and Electronics Engineers2020

Comparison of Wide-band-gap Technologies for Soft-Switching Losses at High Frequencies

Elison de Nazareth Matioli, Halil Kerim Yildirim, Armin Jafari, Palliyage Srilak Nirmana Perera, Reza Soleiman Zadeh Ardebili, Mohammad Samizadeh Nikooytabalvandani, Furkan Karakaya

Soft-switching power converters based on wide-band-gap (WBG) transistors offer superior efficiency and power density advantages. However, at high frequencies, loss behavior varies significantly between different WBG technologies. This includes losses relat ...

2020