Publications de Amin Rassekh | EPFL Graph Search

Design space of quantum dot spin qubits

Jean-Michel Sallese, Farzan Jazaeri, Amin Rassekh

Solid-state qubits can be implemented with electrostatically confined quantum dots in semiconductors, allowing gate voltages to independently control the electrochemical potentials of each quantum dot. Quantum dots offer high levels of reliability and scal ...

ELSEVIER2023

Nonhysteretic Condition in Negative Capacitance Junctionless FETs

Jean-Michel Sallese, Farzan Jazaeri, Amin Rassekh

This article analyzes the design space stability of negative capacitance double-gate junctionless field-effect transistors (NCDG JLFETs). Using analytical expressions derived from a charge-based model, we predict instability condition, hysteresis voltage, ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Negative Capacitance Double-Gate Junctionless FETs: A Charge-Based Modeling Investigation of Swing, Overdrive and Short Channel Effect

Mihai Adrian Ionescu, Jean-Michel Sallese, Farzan Jazaeri, Amin Rassekh

In this article, an analytical predictive model of the negative capacitance (NC) effect in symmetric long channel double-gate junctionless transistor is proposed based on a charge-based model. In particular, we have investigated the effect of the thickness ...

2020

An Experimental Study on Mixed-Dimensional 1D-2D van der Waals Single-Walled Carbon Nanotube-WSe2 Hetero-Junction

Mihai Adrian Ionescu, Farzan Jazaeri, Ali Saeidi, Matteo Cavalieri, Nicolò Oliva, Benjamin Paul Johanès Gabriel Lambert, Sadegh Kamaei Bahmaei, Amin Rassekh

This experimental study investigates a novel multi-functional one dimensional-two dimensional (1D-2D) heterojunction made of two different band-gap semiconductors, i.e. single-walled carbon nanotube (SWCNT) and tungsten di-selenide (WSe2). The proposed ult ...

Institute of Electrical and Electronics Engineers2020

Modeling Interface Charge Traps in Junctionless FETs, Including Temperature Effects

Jean-Michel Sallese, Farzan Jazaeri, Amin Rassekh

In this article, an analytical predictive model of interface charge traps in symmetric, long-channel double-gate, junctionless transistors (JLTs) is proposed based on a charge-based model. Interface charge traps arising from exposure to chemicals, high-ene ...

2019