Guided growth of semiconductor nanowires in nanotube templates has been considered as a potential platform for reproducible integration of III-Vs on silicon or other mismatched substrates. Herein, we report on the challenges and prospects of molecular beam ...

Institute of Physics2016

Tailoring the diameter and density of self-catalyzed GaAs nanowires on silicon

Anna Fontcuberta i Morral, Federico Matteini, Gözde Tütüncüoglu, Vladimir Dubrovskii, Yannik Fontana

Nanowire diameter has a dramatic effect on the absorption cross-section in the optical domain. The maximum absorption is reached for ideal nanowire morphology within a solar cell device. As a consequence, understanding how to tailor the nanowire diameter a ...

Institute of Physics2015

Modeling of InAs-InSb nanowires grown by Au-assisted chemical beam epitaxy

Lorenzo Lugani, Vladimir Dubrovskii

Interesting phenomena during the Au-assisted chemical beam epitaxy of InAs-InSb nanowire heterostructures have been observed and interpreted within the framework of a theoretical model. An unusual, non-monotonous diameter dependence of the InSb nanowire gr ...

2012

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Bistability of Contact Angle and Its Role in Achieving Quantum-Thin Self-Assisted GaAs nanowires

American Chemical Society (ACS)2018

Optimizing the yield of A-polar GaAs nanowires to achieve defect-free zinc blende structure and enhanced optical functionality

Anna Fontcuberta i Morral, Lucas Güniat, Mahdi Zamani, Gözde Tütüncüoglu, Martin George Friedl, Heidi Andrea Potts, Jean-Baptiste Leran, Wonjong Kim, Luca Francaviglia, Vladimir Dubrovskii

2018

Molecular beam epitaxy of InAs nanowires in SiO2 nanotube templates: challenges and prospects for integration of III-Vs on Si

Anna Fontcuberta i Morral, Federico Matteini, Heidi Andrea Potts, Jean-Baptiste Leran, Vladimir Dubrovskii, Jelena Vukajlovic Plestina, Frank Meyer, Ruben Ricca

Institute of Physics2016