Effects of Post-Diffusion Annealing on Zn-Diffused Gaas-Si
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Identical GaAs/Al0.2Ga0.8As multiple-quantum-well (MQW) structures uniformly doped with Si at various concentrations ranging from 1x10(17) to 1X10(19) cm(-3) are grown by molecular-beam epitaxy to study the effects of the background Si-doping level on the ...
The conduction band offset in ZnSe/GaAs n-p heterodiodes was determined from measurements of the low-temperature tunneling current of photoinjected carriers, We found widely different discontinuities for heterojunctions fabricated with different Zn/Se flux ...
Internal photoemission phototransport measurements revealed 0.27+/-0.04 eV conduction- and valence-band discontinuities induced by a Si intralayer at p-GaAs(100)/n-GaAs(100) homojunctions. The interface dipole originating from the heterovalent character of ...
GaAs/AlxGa1-xAs multiple-quantum-well (MQW) structures with identical well thicknesses but with different Al contents x in the barrier (x almost-equal-to 0.1, 0.2, 0.45, and 1) were grown by molecular-beam epitaxy to study the impurity-induced disordering ...
The mechanism of silicon diffusion in GaAs, Al0.3Ga0.7As, and the silicon diffusion-induced layer disordering of multiquantum wells have been studied by photoluminescence, secondary-ion-mass spectroscopy, and transmission electron microscopy across a corne ...
To study the mechanism of zinc diffusion in GaAs, we diffused zinc from a ZnAs2 source into Si-doped GaAs samples (n almost-equal-to 1.3 X 10(18) cm-3) at different temperatures (from 575-degrees-C up to 700-degrees-C) in sealed evacuated quartz tubes. The ...
Long-exposure photographs taken with a Guinier camera on powders of Zn doped YBCO indicate incomplete inclusion of Zn in YBCO for x>=0.05. The study of the temperature dependence of the Hall number in Zn doped YBCO ceramics shows no substantial change of t ...
Two-step spatially delineated growth of copper lines from a solid copper formate layer on a surface is demonstrated. In the first step, a localized platinum film, less than 10 .ANG. high, is deposited. Subsequently the whole surface is covered by a few mic ...
