Time-resolved relaxation oscillations in gain-clamped semiconductor optical amplifiers by pump and probe measurements
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Combining optical gain in direct-bandgap III-V materials with tunable optical feedback offered by advanced photonic integrated circuits is key to chip-scale external-cavity lasers (ECL), offering wideband tunability along with low optical linewidths. Exter ...
Resonant sensors based on micro- and nano-electro mechanical systems (M/NEMS) are ubiquitous in many sensing applications due to their outstanding performance capabilities, which are directly proportional to the quality factor (Q) of the devices. We addres ...
A light pulse source (100), being adapted for generating repetitive optical pulses (1), comprises a continuous wave cw laser device (10) being arranged for providing cw laser light (2), an optical waveguide (20) being optically coupled with the cw laser de ...
Optical frequency combs have the potential to become key building blocks of wavelength-division multiplexing (WDM) communication systems. The strictly equidistant narrow-band spectral lines of a frequency comb can serve either as carriers for parallel WDM ...
In this paper, we review the current state and discuss new developments in opto-optical modulation (OOM) of semiconductor elements for frequency comb self-referenced stabilization of ultrafast lasers. This method has been successfully used for carrier-enve ...
This paper proposes a 2.2 noise efficiency factor (NEF) instrumentation amplifier for neural recording applications. A parametric amplifier based on the MOS C-V characteristic is designed as a pre-amplifier stage, lowering the input referred noise of the f ...
This letter proposes an instrumentation amplifier for neural recording applications whose measured noise efficiency factor (NEF) is 2.2. A discrete-time parametric amplifier is adopted as a preamplification stage to lower the input-referred noise, thus imp ...
This paper presents a fully integrated low power class-E power amplifier and its integration to remotely powered sensor system. The on-chip 1.2 GHz power amplifier is implemented in 0.18 A mu m CMOS process with 0.2 V supply. The implantable system is powe ...
Résumé. Ce document décrit la cinétique de réponse électrique des capteurs de force MilliNewton-B et CentoNewton (toutes versions) utilisant l'électronique "moderne" à un seul amplificateur opérationnel, comparée au capteur MilliNewton-A utilisant un circu ...
Non-linearities introduced by the power amplifier stage can significantly reduce the performance of self-interference cancellation in full-duplex transceivers. Accordingly, we propose a full-duplex system architecture that predistorts the digital baseband ...