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We performed a spectromicroscopy experiment to find evidence of lateral inhomogeneities in the band bending for the Al/GaS system. Microimages of the interface tuned on the Al 2p con levels revealed localized chemical inhomogeneities in proximity of the ed ...
We have studied the effect of valence band mixing on the optical properties of semiconductor quantum wires by analyzing the luminescence polarization. Large polarization anisotropy is observed and directly compared to the effects predicted by a k . p model ...
The optical properties of high-quality V-groove GaAs/AlxGa1-xAs quantum wires have been investigated using low-temperature photoluminescence (PL) and photoluminescence excitation (PLE) techniques. We systematically study the evolution of PL and PLE spectra ...
Quantum many-body states of up to four excitons are studied in small parallelepipedal quantum dots with only two nondegenerate electronic levels in the conduction and in the valence bands. Only one type of hole is considered. We find the set of good quantu ...
We applied the internal photoemission technique to the direct observation of deep levels together with barrier heights and band discontinuities at different semiconductor heterostructure interfaces. Its performances and capabilities are superior to those o ...
We studied the newly synthesized quasi-one-dimensional compound Nb4Te17I4. Resistivity measurements confirmed its pseudo-one-dimensional character and photoemission spectroscopy clarified the nature of its valence band states. This polytelluride is a narro ...
The electronic states in the conduction and valence bands of quantum wires are studied by means of the effective mass hamiltonian and the Luttinger hamiltonian. The band mixing effects due to the wire geometry are fully taken into account by an accurate fi ...