High extraction efficiency, laterally injected, light emitting diodes combining microcavities and photonic crystals
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A fundamental step towards achieving an "on demand" single photon source would be the possibility of electrical pumping for a single QD and thus the integration of such a device in an opto-electronic circuit. In this work we describe the fabrication proces ...
Limitations in extraction efficiency of gallium nitride (GaN) photonic crystal (PhC) light emitting diodes (LEDs) are addressed by implementing an LED design using both two-dimensional PhCs in-plane and index guiding layers (IGLs) in the vertical direction ...
Gallium Nitride (GaN) and its ternary alloys with aluminium and indium have met a growing interest in the last decade. These semiconductors have a large direct bandgap and can be doped with either silicon (Si) for n-type and magnesium (Mg) for p-type layer ...
We are progressively approaching the physical limits of microcavity LEDs (MC-LEDs) for high brightness, high efficiency LEDs. They are promising high efficiency devices and they offer the very attractive prospect of full planar fabrication process. However ...
Self-assembled quantum-dots (QDs) represent a distributed ensemble of zero dimensional structures with a near-singular density of states. Implemented as the active medium in a diode laser their unique properties lead to improved and often novel characteris ...
An experimental method is demonstrated for the determination of internal quantum efficiency (IQE) in III-nitride-based light-emitting diodes (LEDs). LED devices surrounded with an optically absorbing material have been fabricated to limit collected light t ...
This invention relates to metal complexes, and the use of such complexes as an electro luminescent material. It also relates to a light-emitting device comprising such metal complexes, and to a method for manufacturing such a light-emitting ...
