Exciton localization and diffusion in low-dimensional nanostructures formed on non-planar substrates
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In this letter the liquid phase epitaxial growth of In0.71Ga0.29As0.68P0.32 (lambda(g) = 1.32 mum) single quantum well structures lattice matched to (001) InP substrates is reported. The electrical and optical confinement was formed either by InP or In0.88 ...
In a recent paper, we measured the hole diffusion length in a single quantum well (SQW) by a novel method using SEM-cathodoluminescence, assuming that the carriers diffuse only in the SQW. This assumption needs to be checked. Therefore, we present here a m ...
This work shows that the critical thickness for the two-dimensional-three-dimensional growth mode transition during the growth of Ga0.65In0.35As on GaAs(001) can be significantly increased by increasing the growth rate. This experimental finding is corrobo ...
We investigate the dependence of four-wave mixing response on the photon energy close to the fundamental exciton (X) resonance in GaAs quantum wells. We find that cross-polarised incident fields give rise to a non-linear signal which decays faster at energ ...
We present a comparison between the semiclassical and the full quantum descriptions of optical properties of quantum wells (QWs) in semiconductor microcavities. The semiclassical theory, which is based on a nonlocal treatment of the optical response of a s ...
Polaritons in confined systems are introduced and their dispersion is calculated. The amount of squeezing of confined excitons polaritons in GaAs quantum wells is evaluated. ...
We present a study of the electronic properties of In(x)Ga1-xAs/GaAs quantum wells when grown on vicinal substrates, based on photoluminescence (PL) and PL excitation experiments under high magnetic field. The samples measured have a wide range of In conte ...
In a recent paper we measured the lateral hole diffusion in a GaAs/AlGaAs single quantum well (SQW) by a novel method. At helium temperature, we estimate a lateral hole diffusion length in the QW of 1.5 mum. However, the assumption that diffusion takes pla ...
We report the growth behaviour of InP, InGaAs and InGaAsP on non-planar InP substrates where ridges were formed with (111)A, (211)A, (111)B and (551BAR) sidewall planes. All three materials grow uniformly on the whole patterned surface with (111)A and (211 ...
The optical gain spectra of strongly excited multiple GaAs-(Ga,Al)As quantum wells have been determined using the variable stripe length method. The gain spectra are obtained by analysing the dependence of the amplified luminescence intensities on stripe l ...