Polarisation reversal in ferroelectric PVDF and PZT films
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A memory capacitor with a multistacked tunnel layer of Al2O3/HfO2/SiO2 (AHO) has been fabricated together with HfO2 charge trapping layer and Al2O3 control oxide layer. The resulting capacitor exhibits a memory window as large as 7.6 V for +/- 12 V sweep v ...
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We demonstrate a program-erasable metal-insulator-silicon capacitor with a dielectric structure of SiO2/HfO2-Al2O3 nanolaminate (HAN)/Al2O3. The memory capacitor exhibits a high capacitance density of 4.5 fF/mu m(2), a large memory window of 1.45 V in the ...
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The integration of ferroelectrics in electronic devices requires that they be used in the form of thin films, which implies that for such systems finite-size effects related to the presence of a ferroelectric-electrode interface become important. In this t ...
We formulate an approach to the size effect problem in ferroelectric-electrode systems where ab initio calculations are combined with a phenomenological framework. The parameters of the model can be extracted from the calculations, while experimentally ver ...
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We present piezoresponse force microscopy measurements on individual integrated potassium niobate (KNbO3) nanowires. The devices consist of KNbO3 nanowires on SiO2 substrates being mechanically clamped and electrically biased by lithographically defined me ...