Polarization properties of semiconductor quantum dot and dash lasers

Self-assembled quantum-dots (QDs) represent a distributed ensemble of zero dimensional structures, each presenting a near-singular density of states. The QD size, shape, areal density and optical properties depend on growth parameters, such as growth temperature, growth rate and amount of InAs deposed. QDs are very suitable for optoelectronic device applications as during the epitaxial QD growth the phase transition relieves the strain elastically without introducing defects. Embedded in the active medium of a semiconductor laser diode QD's unique properties lead to improved and often novel characteristics as compared to bulk or quantum-well (QW) devices. In particular In(Ga)As QD lasers on GaAs substrates are of largest interest as the spectral range of their emission wavelength reaches further into the infrared than that of QW lasers of the same material system. The emission wavelength of strained InGaAs QW lasers is limited to about 1150nm, whereas in In(Ga)As QD lasers an emission wavelength beyond 1.3µm is feasible. Such kind of QD lasers performed – as recently reported – ultralow threshold current densities combined with decreased temperature sensitivity, relatively high modulation bandwith, low chirp, which has been already predicted many years ago. Beside quantum dot's application in semiconductor lasers, it has been suggested to use QDs also for the optical active region in so-called semiconductor optical amplifier (SOA). So far, experimentally it was possible to demonstrate in QD SOAs a much faster gain recovery time due to more effective carrier re-filling from excited states than in quantum well structures. Also a smaller noise figure ratio compared to QWs was predicted in QD SOA, but has not been experimentally demonstrated yet. However, two major constraints related to the limit of the high-frequency modulation of QD lasers and the QD SOA's polarization sensitivity are required to be first resolved, before it is possible to implement both technologies replacing QW devices in optical broad telecommunications devices. The polarization properties of semiconductor quantum dot/-dash lasers and amplifiers have been addressed in this PhD thesis. Within this research work – studying systematically several quantum dot and -dash heterostructure of different material families – two major goals have been identified: (1) characterization of the optical polarization properties of quantum dot/-dash structures embedded in the active region of semiconductor optical amplifiers and (2) realization of polarization-insensitive quantum dot based SOAs. Moreover, this thesis focuses on the understanding of the underlying physics being responsible for the QD's polarization and the dependence of the optical gain on the QD's aspect ratio and compositional material contrast. In terms of the experimental work broad area laser devices have been fabricated by applying different clean room processing methods like photolithography, metal deposition, wet and plasma etching. Through a subsequent device characterization using optoelectronic measurement techniques the polarization characteristics of dots and dashes have been accessed. From broad area laser device characterization – measuring the polarization-resolved edge-emitted electroluminescence (EL) – the polarization properties of standard Stranski-Krastanov (SK), closely- and columnar stacked InAs/GaAs quantum dots as well of closely-stacked InAs/InP quantum dots and columnar-stacked InAs/InP quantum dashes – in total 32 devices – have been evaluated. The comparison of the transversal magnetic (TM) versus -electric (TE) integrated EL signal for above heterostructures provided very promising results in order to achieve polarization-independent QD SOA: Starting from standard SK QDs – emitting dominantly in TE mode – it was possible first to enhance the TM EL signal compared to TE by epitaxial shape-engineering of the dot/dash structure of the QD's aspect ratio and the compositional material contrast in columnar-stacked InAs/GaAs (InAs/InP) QDs (QDashes), and then inverting the polarization direction from dominant TE towards dominant TM. The latter polarization transition has been also confirmed by photovoltage spectroscopy (PVS), and as well from room-temperature TM-lasing demonstration – both carried out by our research partner from the Cardiff University, Wales (UK). Introducing the well-known segment contact method for gain measurements, which is based on the analysis of the amplified spontaneous emission (ASE) generated by cavities of different length, it was possible to access both the TM and TE gain of such columnar-stacked InAs/GaAs quantum dots. The work was motivated and funded by the European Union project "Zero Order Dimension based Industrial components Applied to teleCommunications" (ZODIAC) within the sixth framework program. Very fruitful collaborations in order to exchange scientific ideas/know-how and achieving joint results have been established in a pan-European and multicultural inspired environment between four industrial partners – Alcatel Thales III-V Lab (France), Bookham (GB), Innolume – GmbH (Germany), Nanoplus Nanosystems and Technologies-GmbH (Germany) – and three national research institutes – Laboratory for Photonics and Nanostructures (France), The Tyndall National Institute (Irland), Saint-Petersburg Physics and Technology Centre for Research and Education of the Russian Academy of Science (Russia) – and three Universities: École Polytechnique Fédérale de Lausanne (Switzerland), Politechnika Wroclawska (Poland), Würzburg University (Germany). Besides this European ZODIAC project it was possible to establish with the Cardiff University, Wales (UK) a very constructive collaboration.

Realization and study of InAs/GaAs quantum dot superluminescent diodes emitting at 1.3µm

Marco Rossetti

A quantum dot is a semiconductor nanostructure that confines the motion of conduction band electrons and valence band holes in all three spatial directions, thus creating fully discrete energy levels. The confinement in the InAs/GaAs material system is generated by the bandgap difference for the two materials (∼ 0.4 eV for InAs, and ∼ 1.4 eV for GaAs) which provides a minimum of potential energy for both electrons and holes inside the InAs nanoparticle. The appearance of new nanoscale effects modifies the electro-optical properties of such a system which makes possible the improvement of existing device performance or even fascinating novel device applications. For the creation of coherent structures with very high purity and high density, as it is required for application in light emitting devices, self-assembling is a very important pathway. The quantum dot creation mostly relies on the relaxation of the strain accumulated during the growth of lattice mismatched materials, which happens in a non-equlibrium condition. This results in a statistical distribution of all the parameters characterizing the InAs nanocrystals as size, composition and strain, whose direct manifestation is the inhomogeneously broadened light emission deriving from quantum dot ensembles. At the dawning of the quantum dot development the broadening was considered as a limiting factor for application in semiconductor lasers. Today, it is considered favorably for all the applications where a broad gain spectrum is required as optical amplifiers, monolithic and external-cavity tunable lasers, and superluminescent diodes. The objective of this thesis is the application of InAs/GaAs self-assembled quantum dots to the active region of high power and broad-band superluminescent diodes emitting in the 1.3 μm wavelength region. Superluminescent diodes are edge-emitting semiconductor light sources based on the amplification of spontaneous emission along a waveguide where optical gain is achieved through current injection. They combine the high power and brightness of laser diodes with the low coherence of LEDs. The latter is a fundamental feature for the application in optical coherence tomography medical imaging, where the image resolution is related to the spectral bandwidth of the light source used. The achievement of bandwidths larger than 100 nm are demonstrated in this work through the optimization of molecular beam epitaxy growth conditions. This may be done optimizing the statistical size-dispersion of the dot ensemble, or through the use of different dot layers emitting at slightly different wavelengths. The large bandwidth emission is obtained also due to the peculiar energy structure of this material, for which a multi-state emission appears under particular injection conditions. As a term of comparison, best commercial single-chip superluminescent diodes for the imaging application at 1.3 μm show bandwidths around 60 nm. Moreover, the discrete nature of the energy levels in InAs quantum dots together with the implementation of a GaAs-based technology can be beneficial for the device temperature stability (the competing technology, based on InP, suffers from strong thermal degradation). The analysis and understanding of the device temperature characteristics will be detailed in the last chapter of the manuscript. Even though standard devices show an important temperature dependence, a better stability may be achieved through the use of p-doped active regions. In the last few years quantum dot devices have shown outstanding properties if compared to the competing quantum well technology. Low threshold currents, high temperature stability and low chirp in lasers, large bandwidths and low gain saturation in amplifiers have been demonstrated. However, in spite of the large interest among the scientific community, many of the microscopic processes at the origin of the electro-optical characteristics of this material are not completely understood yet. The physics of the quantum dot active material, will be modeled in this work through the use of systems of rate equations with different complexity depending on the system they are applied to. We will provide a mean-field rate equation model allowing to get insights about carrier dynamics in QD lasers. Also, we will develop two different traveling-wave rate equation models, one for the modeling of the L-I characteristics and the other for the modeling of the spectral characteristics of quantum dot superluminescent diodes. Considering the carrier and photon density distributions across the device cavity is essential in superluminescent diodes, where the high single pass gain results in large non-homogeneities of photon and carrier distributions. The work is motivated by an industrial cooperation with EXALOS AG, a leading company in the development, manufacturing, and sales of broadband superluminescent diodes.

EPFL2007

Growth and characterization of single quantum dot devices for fiber-based quantum communications

Blandine Alloing

Single photon sources have recently attracted significant interest for their potential role in the future applications of quantum cryptography, and in the longer term, quantum computing. Among the different types of single photon emitters, semiconductor quantum dots (QDs) are good candidates as they combine discrete electronic transitions with the possibility of electrical excitation. Self-assembled InAs QDs on GaAs substrate are by far the most studied system as they can easily be grown into a microcavity structure. Embedding these into a microcavity is important as it increases the extraction efficiency, directionality and speeds up the photon emission. Until now, most studies have concentrated on QDs emitting in the λ

EPFL2006

Dynamics of quantum dot lasers

Pablo Moreno

The exceptional performance of self-assembled Quantum Dot (QD) materials renders them extremely appealing for their use as optical communications devices. As lasers, they feature reduced and temperature independent threshold current and proper emission wavelength at the fiber telecommunication windows. These characteristics, together with the low linewidth enhancement factor and broad spectrum, make QD materials extremely attractive for application as light emitters or amplifiers. There exist, nevertheless, several unclear issues which prevent QDs from conquering the new generation of optoelectronic devices. Their differential efficiency is lower than expected. The output power of QD lasers is lower than that of their quantum well counterpart. Still, it is their dynamics which has incited the majority of studies. The modulation bandwidth of these devices seems to be limited by the relaxation of carriers from the upper energetic layers to the low levels within the dot. Besides, the electron-hole interaction is widely unknown, the extent of the electron-hole Coulombic attraction is not yet established. Throughout this thesis I present a theoretical and experimental study of the gain and phase dynamics of quantum dot lasers. I explain the appearance of different decay times observed in pump and probe experiments in QD amplifiers as a result of the different electron and hole relaxation times, by means of an electron-hole rate-equation model. The ultrafast hole relaxation first leads to an ultrafast recovery of the gain, which is then followed by electron relaxation and, on the nanosecond timescale, radiative and non-radiative recombinations. The phase dynamics is slower and is affected by thermal redistribution of carriers within the dot. Our results corroborate with spectral measurements of the dephasing and gain in QD amplifiers. Additionally, our work is compared with existing pump and probe results. Exploiting the capacity of QD lasers to emit at two different wavelengths corresponding to the ground state (GS) and excited state (ES), I present a theoretical study of the QD dynamics, based on a linearization of the QD rate-equations. The results predict the existence of single oscillation frequency of GS and ES, meaning that both states are highly coupled. In order to verify our theory, we perform two kinds of experiments. By modulating these lasers at high frequency, we measure separately the dynamics of GS and ES. However, in contradiction to our theory, two different modulation frequencies are found. Additional temporally-resolved measurements of the laser dynamics reveal a surprising effect. By injecting a sub-bandgap pump in an InAs/InGaAs QD laser, the emitted photons are depleted. Through additional transmission and photocurrent measurements, we relate this observation with carrier photoexcitation, which was so far only theoretically addressed. The role of carrier photoexcitation in our experimental laser dynamics is further supported by a rate-equation model. Impelled by this finding, we study the effect of carrier photoexcitation in the static and dynamic characteristics. We find that carrier photoexcitation reduces the efficiency of QD lasers, which is one of the major QD handicaps, and depletes the GS lasing after the ES threshold, as observed experimentally. Moreover, by adding carrier photoexcitation to our linearization of the rate-equations, we find that the theory predicts the appearance of two lasing resonance frequencies, in agreement with our previous experimental results. Additionally, we deal with the improvement of carrier relaxation. In tunnel injection devices, carriers are given an additional path towards the ground state of the dot by growing a quantum well layer close to the QD active plane. Through the quantum-mechanical tunneling effect, carriers relax from the nearby quantum well layer to the QDs, which speeds up relaxation. We aim at the increase of the modulation bandwidth while keeping the good performances quantum dot lasers have exhibited, such as low and temperature insensitive threshold current and proper emission wavelength. In the final part of this work, we present dynamical measurements of 1.5 µm InAs/InP tunnel injection and non-tunnel injection QD lasers, which display remarkable static characteristics. After proving with static measurements that tunnel injection is actually taking place in these structures, we show several dynamic measurements. Pump and probe measurements on QD devices show that the tunnel injection samples exhibit a slightly faster relaxation time than the non-tunnel injection samples used as reference, meaning that relaxation time is improved with tunnel injection. However, by probing the device with an ultrafast pump no improvement of the dynamic characteristics is observed. These results confirm that the laser dynamic properties of InP QD lasers, both standard and tunnel-injection designs, are actually not limited by relaxation of carriers. We point towards the size distribution of these quantum dash-like structures as the limiting factor of the modulation frequency.