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Optimization of nanoelectronic systems' reliability under massive defect density using Cascaded R-fold modular redundancy

Publications associées (33)

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Growth approaches that limit the interface area between layers to nanoscale regions are emerging as a promising pathway to limit the interface defect formation due to mismatching lattice parameters or thermal expansion coefficient. Interfacial defect mitig ...

AMER CHEMICAL SOC2022

Stoichiometry modulates the optoelectronic functionality of Zinc Phosphide (Zn3-xP2+x)

Anna Fontcuberta i Morral, Elias Zsolt Stutz, Santhanu Panikar Ramanandan, Mischa Samuel Flór, Diego Armando Sandoval Salaiza, Jean-Baptiste Leran, Mahdi Zamani, Simon Robert Escobar Steinvall, Rajrupa Paul, Mirjana Dimitrievska, Maria Chiara Spadaro

Predictive synthesis–structure–property relationships are at the core of materials design for novel applications. In this regard, correlations between the compositional stoichiometry variations and functional properties are essential for enhancing the perf ...

2022

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The origin of the low densities of electrically active defects in Pb halide perovskite (HaP), a crucial factor for their use in photovoltaics, light emission, and radiation detection, remains a matter of discussion, in part because of the difficulty in det ...

AMER CHEMICAL SOC2022

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Despite FPGAs rapidly evolving to support the requirements of the most demanding emerging applications, their high static power consumption, concentrated within the routing resources, still presents a major hurdle for low-power applications. Augmenting the ...

2021

Ultrafast carrier dynamics in III-nitride nanostructures and LED quantum efficiency

Wei Liu

Since the seminal report about the first Candela-class-brightness InGaN blue light-emitting diodes (LEDs) by Shuji Nakamura et al. in 1994, III-nitride semiconductors have been one of the most important platforms for optoelectronic devices. The achieve ...

EPFL2019

Formation energies of C, Si, and Ge defects in beta-Ga2O3 are studied through hybrid functional calculations. The interstitial defects of these elements generally occur at higher energies than their substitutional counterparts, but are more stable at low F ...

WILEY-V C H VERLAG GMBH2019

The interaction between domain walls and pinning centers in ferroelectrics is of great interest from both fundamental and practical points of view. In this work, we show that, counter to intuition, the apparent velocity of domain walls can increase as the ...

Amer Inst Physics2017

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A routing architecture for fast interconnections between Look-Up Tables (LUTs) in a group of Basic Logic Elements (BLEs), whereby a size of the group ranges from 1 to k+1, where k is the number of inputs of a LUT, and LUTs in the group are indexed from 1 t ...

2016

Polarity Control at Runtime

Michele De Marchi

Semiconductor device research for digital circuit design is currently facing increasing challenges to enhance miniaturization and performance. A huge economic push and the interest in novel applications are stimulating the development of new pathways to ov ...

EPFL2015

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The effect of He on the primary damage induced by irradiation in ultrahigh-purity (UHP) Fe and Fe(Cr) alloys was investigated by transmission electron microscopy (TEM). Materials were irradiated at room temperature in situ by TEM in a microscope coupled to ...

Pergamon-Elsevier Science Ltd2013