Plasma Deposition of Thin Film Silicon: Cinetics Monitored by Optical Emission Spectroscopy
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Microcrystalline silicon (μc-Si:H) of truly intrinsic character can be deposited by plasma-enhanced chemical vapor deposition (PECVD) when dichlorosilane (SiH2Cl2) is added. A dark conductivity of 1.6×10-8 S/cm and an activation energy of 0.62 eV are obtai ...
Microcrystalline silicon growth using very high frequency-glow discharge PECVD has been studied under conditions of high pressure and high VHF-power conditions. Hereby, the influence of the total gas flow and the silane concentration on the deposition rate ...
In situ Fourier transform infrared (FTIR) absorption spectroscopy has been used to determine the fractional depletion of silane in a radio-frequency (ri) glow discharge. The technique used a simple single-pass arrangement and was implemented in a large-are ...
This contribution describes the introduction of hydrogenated microcrystalline silicon (μc-Si:H) as novel absorber material for thin-film silicon solar cells. Work done at IMT Neuchâtel in connection with deposition of μc-Si:H layers by very high frequency ...
When silicon thin films are deposited by plasma enhanced chemical vapor deposition in a plasma regime close to powder formation, a new type of material, consisting of an amorphous matrix in which silicon nanocrystallites are embedded is obtained. This mate ...
The absorption and emission spectra of the 3P1-1S0 transition of a Hg atom embedded in solid Ar were simulated using the mol. dynamics with quantum transitions algorithm to consider the nonadiabatic transitions between the three adiabatic states. The simul ...
The case for thin-film silicon as one of the main future options for cost-effective photovoltaic solar cells is outlined. The limitations of present amorphous silicon (a-Si:H) solar cells are briefly mentioned. Hydrogenated microcrystalline silicon (μc-Si: ...
A fast and sensitive method for measurement of spectral dependence of the optical absorption coefficient α(E) in thin films of photosensitive materials is introduced. A Fourier transform infrared (FTIR) spectrometer is used with a photoconductive sample as ...
We investigate the hydrogen related bonding structure in hydrogenated polymorphous silicon films (pm-Si:H) and hydrogenated microcrystalline silicon. Infra-red spectra reveal some new features for both kinds of films. namely new modes appearing in the stre ...
Particle contamination formed in reactive plasmas imposes an upper limit on the rate for particle-free deposition. Conversely, these plasmas could be exploited to produce nanometric clusters and particles for various applications. Infrared absorption spect ...
Mat. Res. Soc. Symp. Proc. Vol. 507, Materials Research Society1998
