Determination of Raman emission cross-section ratio in microcrystalline silicon
Graph Chatbot
Chattez avec Graph Search
Posez n’importe quelle question sur les cours, conférences, exercices, recherches, actualités, etc. de l’EPFL ou essayez les exemples de questions ci-dessous.
AVERTISSEMENT : Le chatbot Graph n'est pas programmé pour fournir des réponses explicites ou catégoriques à vos questions. Il transforme plutôt vos questions en demandes API qui sont distribuées aux différents services informatiques officiellement administrés par l'EPFL. Son but est uniquement de collecter et de recommander des références pertinentes à des contenus que vous pouvez explorer pour vous aider à répondre à vos questions.
Properties of thin films such as the crystallinity of silicon deposited from SiH4 - H-2 discharges are governed by the plasma composition. Therefore, it is crucial to measure the plasma composition in order to understand and optimize the deposition rate, d ...
Zinc oxide (ZnO) is a material that belongs to the family of Transparent Conductives Oxides (TCO). Its non-toxicity and the abundant availability in the Earth's crust of its components make it an ideal candidate as electrical transparent contact for thin-f ...
The constant energy consumption and world-wide demography expansion add to the potential risks of ecological and human disaster associated with global warming. This makes it a necessity to develop renewable energy technologies such as photovoltaic energy. ...
Doped ZnO layers deposited by low-pressure chemical vapour deposition technique have been studied for their use as transparent contact layers for thin-film silicon solar cells. Surface roughness of these ZnO layers is related to their light-scattering capa ...
Microcrystalline silicon growth using very high frequency-glow discharge PECVD has been studied under conditions of high pressure and high VHF-power conditions. Hereby, the influence of the total gas flow and the silane concentration on the deposition rate ...
Several organic and inorganic materials have emerged as promising candidates for the active layer of field-effect transistors (FETs) fabricated on flexible substrates. The charge transport models necessary for device optimization in these systems are at di ...
Spie-Int Soc Optical Engineering, Po Box 10, Bellingham, Wa 98227-0010 Usa2007
During the last two decades, the Institute of Microtechnology (IMT) has contributed in two important fields to future thin-film silicon solar cell processing and design: (1) In 1987, IMT introduced the so-called "very high frequency glow discharge (VHF-GD) ...
A series of nip-type microcrystalline silicon (μc-Si:H) single-junction solar cells has been studied by electrical characterisation, by transmission electron microscopy (TEM) and by Raman spectroscopy using 514 and 633 nm excitation light and both top- and ...
The qualitative description of the major microstructure characteristics of microcrystalline silicon is achieved through a three-dimensional discrete dynamical growth model. The model is based on three fundamental processes that determine surface morphology ...
The paper reports on the effects of a proton irradiation campaign on a series of thin-film silicon solar cells (single- and double-junction). The effect of subsequent thermal annealing on solar cells degraded by proton irradiation is investigated. A low-te ...