Pseudomorphic growth induced by chemical adatom potential
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In the past decades, III-nitride semiconductor compounds have attracted an increasing amount of interest due to their applications to blue-violet laser diodes and white light emitting diodes, or for their use as ultraviolet emitting devices for biomedical ...
We have studied the properties of Mg-doped GaN epilayers grown by molecular beam epitaxy (MBE) with ammonia as nitrogen source. GaN p-n homojunctions has been developed to determine the optoelectronic characteristics of the junctions as a function of the p ...
A study of the GaN nanocolumns nucleation and growth by molecular beam epitaxy on Si(111) is presented. Ga droplets with different diameters (340-90 nm) were deposited on the substrate. prior to growth, to determine any effect on the nanocolumns size and d ...
Gallium arsenide p-i-n radial junctions were fabricated by molecular beam epitaxy. The current-voltage characteristics of single nanowires were measured in the dark and under various illumination conditions including 1.5 AM. The total efficiency was 4.5%. ...
The surface morphology of GaN(0001) grown on Si(111) by molecular beam epitaxy using ammonia has been studied by near-field microscopy techniques. Two distinct morphologies are observed, depending on the growth kinetics. When using Ga-rich growth condition ...
The microstructure of ferroelectric Cd1−xZnxTe (CZT) thin films with x ≈ 0.04 grown by molecular beam epitaxy has been studied by means of cross sectional high-resolution transmission electron microscopy (HREM). High- density {1 1 1} lamellar twins are fou ...
Gallium arsenide p-i-n radial junctions were fabricated by molecular beam epitaxy. The current-voltage characteristics of single nanowires were measured in the dark and under various illumination conditions including 1.5 AM. The total efficiency was 4.5%. ...
We report on the growth of high-electron-mobility AlGaN/GaN heterostructures on silicon (111) substrates by molecular-beam epitaxy using ammonia as the nitrogen source. Crack-free GaN layers up to 3 mum are obtained. Their optical properties are similar to ...
Gallium nitride (GaN) is one of the most interesting materials for devices applications such as blue light emitting diodes, laser diodes and high power and high temperature electronic applications, because of its large band gap (3.39 eV). Several growth te ...
GaInN/GaN heterostructures have been grown by molecular beam epitaxy (MBE) on c-plane sapphire substrates. The growth of Ga1-xInxN (x > 12%) alloy has been extensively studied. At low V/III ratio, the growth undergoes a Stranski-Krastanov transition giving ...
