Domain wall contributions to the properties of piezoelectric thin films
Publications associées (55)
Graph Chatbot
Chattez avec Graph Search
Posez n’importe quelle question sur les cours, conférences, exercices, recherches, actualités, etc. de l’EPFL ou essayez les exemples de questions ci-dessous.
AVERTISSEMENT : Le chatbot Graph n'est pas programmé pour fournir des réponses explicites ou catégoriques à vos questions. Il transforme plutôt vos questions en demandes API qui sont distribuées aux différents services informatiques officiellement administrés par l'EPFL. Son but est uniquement de collecter et de recommander des références pertinentes à des contenus que vous pouvez explorer pour vous aider à répondre à vos questions.
The influence of compressive strain on the linear electro-optic (EO) effect in c-domain (BaxSr1-x)TiO3 (BST) thin films was theoretically investigated using a phenomenological thermodynamic model. We considered that the c-domain BST thin films were grown o ...
Dynamics of domain walls are among the main features that control strain mechanisms in ferroic materials. Here, we demonstrate that the domain-wall-controlled piezoelectric behaviour in multiferroic BiFeO3 is distinct from that reported in classical ferroe ...
2018
,
We study the interaction of intense THz magnetic fields with ferromagnetic thin films. At higher field intensities, the THz electric field starts playing a role, strongly changing the dielectric properties of the cobalt thin film. ...
As dynamic interfaces in piezoelectric materials, domain walls can greatly impact the functionality under applied external fields. Recently, conductive domain walls have been found to result in Maxwell-Wagner (M-W)-like dispersion of the lattice strain and ...
"More with less" has been the motto behind the hardware miniaturization trend in the microelectronics industry since the 1970s. Active research in the growth of oxide films, including ferroelectrics, which started soon after, followed the same trend. Meanw ...
The interfaces in complex oxides present unique properties exploitable in nanoscale devices. Recent studies on ferroelectric BiFeO3, BaTiO3, and Pb(Zr, Ti) O-3 have revealed an unusually high electric conductivity of the domain walls (DWs), adding another ...
Micro- and nanoelectromechanical systems (MEMS/NEMS) have long shown their potential to disrupt the established technologies. Over the past 15 years, MEMS have become fundamental components in filters, accelerometers, gyroscopes and gas sensors. MEMS are n ...
The speed of change in the modern world is impressive. Within the last 50 years, many devices and technologies have significantly transformed their appearance, intrinsic characteristics and improved their performance. Computers have changed from the size o ...
EPFL2022
, ,
In this paper, we demonstrate the fabrication of contour-mode resonators (CMRs) with Al0.83Sc0.17N as a piezoelectric layer. Moreover, we assess the electromechanical coupling and the maximum achieved quality factor from 150 to 500 MHz. In comparison to pu ...
Donor doping is commonly applied for softening of the piezoelectric and dielectric properties and facilitation of polarization switching in the ubiquitous Pb(Zr,Ti)O-3 [PZT] ceramics. The origin of the donor-dopant effects is not entirely clear. (Pb,Ba)ZrO ...
