Near-field autocorrelation spectroscopy of disordered semiconductor quantum wells
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GaAs/AlxGa1-xAs multiple-quantum-well (MQW) structures with identical well thicknesses but with different Al contents x in the barrier (x almost-equal-to 0.1, 0.2, 0.45, and 1) were grown by molecular-beam epitaxy to study the impurity-induced disordering ...
Results are presented of both linear optical transmission and femtosecond four-wave mixing measurements, on a II-VI semiconductor microcavity into which three quantum wells have been inserted. The excitons (Xs) confined in the wells are strongly coupled to ...
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Semiconductor quantum wires (QWRs) are promising structures for optoelectronics applications, since they can provide quantum confinement for charge carriers in two dimensions. The advantage that they offer over conventional quantum wells (QWs) is due to th ...
The interplay of disorder effects and exciton-exciton interactions in the four-wave-mixing process in quantum wells is investigated. Experiments are performed employing femtosecond and picosecond pulses to have either good temporal or good spectral resolut ...
We investigated the optical properties of excitons in quasi-one-dimensional semiconductor quantum structures by photoluminescence and photoluminescence excitation: High-quality GaAs/AlxGa1-xAs heterostructures were grown using low-pressure organometallic c ...
Polaritons in confined systems are introduced and their dispersion is calculated. The amount of squeezing of confined excitons polaritons in GaAs quantum wells is evaluated. ...
Chemical beam epitaxy (CBE) grown InAsP/InGaAsP edge-emitting laser diodes on GaAs substrates obtained by localised fusion in a nitrogen environment exhibit high quality fused interfaces. A degradation of fused lasers is observed which is attributed to the ...
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