Role of the exchange of carriers in elastic exciton-exciton scattering in quantum wells
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Type II double barrier AlxGa1-xAs/AlAs/GaAs quantum wells with ultra-thin AlAs layers (1 or 2 monolayers (ML) wide) have been studied by photoluminescence as a function of the substrate misorientation. A blue shift of the recombination lines is observed wh ...
We show that the two-dimensional quantum confined Stark effect in a semiconductor quantum wire can display novel behaviour, i.e. wave function splitting and cascading. No analog to these phenomena can be found in bulk material or quantum wells. The consequ ...
We investigate the exciton formation process from free carriers in a single GaAs quantum well. We focus on the formation processes assisted by emission and absorption of acoustic and optical phonons. The formation rates are evaluated and compared to the ex ...
GaAs/AlxGa1-xAs multiple-quantum-well (MQW) structures with identical well thicknesses but with different Al contents x in the barrier (x almost-equal-to 0.1, 0.2, 0.45, and 1) were grown by molecular-beam epitaxy to study the impurity-induced disordering ...
We report on a transparent analysis of the luminescence spectra of dense electron-hole plasmas confined in GaAs/(Ga,Al)As quantum wells. We fit the spectra using the fact that the total number of particle states does not depend on collision broadening. Fur ...
A steady state photoluminescence experiment is reported investigating the lifetime of an electron-hole plasma confined in a quintum well. The results are compared with theoretical evaluations of the pure radiative decay rate and good agreement is found. Th ...
We present an investigation of the optical gain and its saturation of the electron-hole plasma confined in GaAs/(Ga,Al)As quantum wells. For such investigations the variable stripe length method is a simple but quite powerful tool. The spacial longitudinal ...
We report on an investigation of the electron-hole (e-h) plasma decay time tau(tot) versus e-h pair density in semiconductor quantum wells. We determine the density reached in a steady-state photoluminescence experiment from the optical spectra and compare ...
The cathodoluminescence mode of the scanning electron microscope is used for the first time to investigate the lateral dependence of the electron-hole pair generation by the electron beam of the scanning electron microscope m semiconducting material. A mul ...
We present a study of the electronic properties of In(x)Ga1-xAs/GaAs quantum wells when grown on vicinal substrates, based on photoluminescence (PL) and PL excitation experiments under high magnetic field. The samples measured have a wide range of In conte ...
