Validity of the bond-energy picture for the energetics at Si-SiO2 interfaces
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Silicon dioxide (SiO2) films grown on silicon monocrystal (Si) substrates form the gate oxides in current Si-based microelectronics devices. The understanding at the atomic scale of both the silicon oxidation process and the properties of the Si(100)-SiO2 ...
A review, with over 209 refs., is given on the prepn. and structures of all known salts of the known homopolyat. cations of the chalcogens and halogens. The structures of these cations, many of which are nonclassical and cluster-like, arise from pos. charg ...
The attempt to prep. hitherto unknown homopolyat. cations of sulfur by the reaction of elemental sulfur with blue S8(AsF6)2 in liq. SO2/SO2ClF, led to red (in transmitted light) crystals identified crystallog. as S8(AsF6)2. The X-ray structure of this salt ...
Thin, hydrogenated silicon and carbon containing films have been deposited by the siliconization procedure on targets made from some metal alloys, pure metals, graphite and Si single crystal. The deposits were investigated by electron microprobe and surfac ...
After assessing the current status concerning the interpretation of Si 2p core-level shifts in Si-O systems, we model the atomic structure of the Si(001)-SiO2 interface using recent photoemission data obtained with synchrotron radiation. Our model structur ...
Thin silicon dioxide films nitrided in N2O by rapid thermal processing (RTP) or in a classical furnace were investigated by x-ray photoelectron spectroscopy, secondary ion mass spectroscopy, and electrical measurements on metal-oxide-semiconductor capacito ...
We present a first-principles investigation of the structural properties of two models for the Si(001)-SiO2 interface. The models derive from attaching tridymite, a crystalline form of SiO2, to Si(001), and then allowing for full relaxation. These models d ...
Platinum silicide films are widely used in silicon devices for ohmic and Schottky contacts. It has been demonstrated in the recent years that Schottky barriers employing ultra-thin platinum silicide films (thickness < 10 nm) are useful for photodetection i ...
The behavior of alpha-quartz under hydrostatic and nonhydrostatic high-pressure conditions has been investigated in molecular dynamics simulations of silica in order to clarify the role of nonhydrostatic stresses in the amorphization process. It is shown t ...
