Multiscale modeling of oxygen diffusion through the oxide during silicon oxidation
Graph Chatbot
Chattez avec Graph Search
Posez n’importe quelle question sur les cours, conférences, exercices, recherches, actualités, etc. de l’EPFL ou essayez les exemples de questions ci-dessous.
AVERTISSEMENT : Le chatbot Graph n'est pas programmé pour fournir des réponses explicites ou catégoriques à vos questions. Il transforme plutôt vos questions en demandes API qui sont distribuées aux différents services informatiques officiellement administrés par l'EPFL. Son but est uniquement de collecter et de recommander des références pertinentes à des contenus que vous pouvez explorer pour vous aider à répondre à vos questions.
The main objectives of this work are 2-fold : The development of a novel type of composite material based on carbon nanofibers supported on sintered metal fibers filters (CNF/SMF) and to explore the use of this material as a catalytic support for a model r ...
Nitrous oxide is the third most important gas contributing to global warming and its concentration in the atmosphere is still on the rise. Nitric acid production represents the largest source of N2O in the chemical industry, with a total annual emission of ...
Silicon dioxide (SiO2) films grown on silicon monocrystal (Si) substrates form the gate oxides in current Si-based microelectronics devices. The understanding at the atomic scale of both the silicon oxidation process and the properties of the Si(100)-SiO2 ...
We address the rate of O-2 diffusion through the oxide layer at Si-SiO2 interfaces using an atomic-scale approach. In particular, we investigate the combined effect of a percolative diffusion mechanism and of a dense oxide layer located close to the silico ...
In this study, we examine the parameters that govern the overall oxygen flux through a permeation membrane. The chemical diffusion (D) and the surface exchange (k) coefficients for oxygen in La0.6Sr0.4Fe0.8Co0.2O3-d were determined as a function of tempera ...
Electrochemical techniques were applied to a coulometric titration cell to study oxygen nonstoichiometry and transport in the perovskite-type oxide La0.4Ba0.6Fe0.8Co0.2O3-delta. Slow scan voltammetry (3mV/s) was used to obtain oxygen nonstoichiometry vs. t ...
Positively charged defects induced by protons at the Si(100)-SiO2 interface are studied through density-functional calculations and realistic interface models. Protons generally preserve the bonding network, but cause the spontaneous breaking of strained b ...
We model the fundamental kinetic processes occurring during silicon oxidation at the atomic scale. We first focus on the diffusion of the, neutral O-2 molecule through the oxide layer. By combining ab initio and classical simulations, we derive a statistic ...
In UV-curable printing technology, an ink or a varnish is exposed to the UV-light source within a fraction of a second. Subsequent polymerization therefore proceeds in the dark, referred to as dark curing. Because dark curing can be critical and contribute ...
Using constrained ab initio molecular dynamics, we investigate the reaction of the O-2 molecule at the Si(100)-SiO2 interface during Si oxidation. The reaction proceeds sequentially through the incorporation of the O-2 molecule in a Si-Si bond and the diss ...
