Atomic-scale modelling of the Si(100)-SiO2 interface
Graph Chatbot
Chattez avec Graph Search
Posez n’importe quelle question sur les cours, conférences, exercices, recherches, actualités, etc. de l’EPFL ou essayez les exemples de questions ci-dessous.
AVERTISSEMENT : Le chatbot Graph n'est pas programmé pour fournir des réponses explicites ou catégoriques à vos questions. Il transforme plutôt vos questions en demandes API qui sont distribuées aux différents services informatiques officiellement administrés par l'EPFL. Son but est uniquement de collecter et de recommander des références pertinentes à des contenus que vous pouvez explorer pour vous aider à répondre à vos questions.
The electronic structure of a Pb overlayer on Ag(111) has been studied by angle-resolved photoemission spectroscopy. We identify three p bands. While the p(xy) bands are sharp and closely resemble the corresponding bands of a free-standing Pb layer, the p( ...
Electronic band gaps and dielectric constants are obtained for amorphous hafnium silicates using first-principles methods. Models of amorphous (HfO2)(x)(SiO2)(1-x) for varying x are generated by ab initio molecular dynamics. The calculations show that the ...
Responses to educational inequality in Ireland are typically individualistic, addressing themselves to the individual learner rather than to the structural or social processes that give rise to inequality. This chapter reviews some of the systemic causes o ...
In continuation of recent work on the dielec. response of imidazolium-based ionic liqs. (ILs) (J. Phys. Chem. B, 2006, 110, 12682), the authors report on the effect of cation variation on the frequency-dependent dielec. permittivity up to 20 GHz of ionic l ...
We review the structural, electronic and dielectric properties of atomistic models of the Si(100)-SiO2 interface, which have been purposely designed in order to match a large variety of atomic-scale experimental data. After describing the generation proced ...
We study the electronic structure and the dielectric permittivity of ultrathin oxide layers on Si(I 00) substrates. By considering two different Si(l 00)-SiO2 interface models, we first show that the electronic structure in the interfacial oxide differs fr ...
We propose and examine a simple model for credit migration and spread curves of a single firm both under real-world and risk-neutral measures. This model is a hybrid of a structural and a reduced-form model. Default is triggered either by successive downgr ...
We study the interfacial electronic properties of a model Si-SiO2-Si structure which is intended to simulate the substrate-oxide-polysilicon stack in metal-oxide-semiconductor devices. The structural properties of this model are shown to match closely thos ...
Mol. dynamics simulations (MDS) of the structural rearrangements on the pathway leading to procaspase 3 (I) activation are presented. A retrostructural approach was used to build I from mature caspase 3 (II). The peptide bond that was cleaved during enzyme ...
We investigate the dielectric screening across the Si-SiO2 interface using a first-principle approach. By determining the profile of the microscopic polarization and the effective polarizabilities of SiOn (n = 0,..4) structural units, we show that the vari ...