Band gaps and dielectric constants of amorphous hafnium silicates: A first-principles investigation
Graph Chatbot
Chattez avec Graph Search
Posez n’importe quelle question sur les cours, conférences, exercices, recherches, actualités, etc. de l’EPFL ou essayez les exemples de questions ci-dessous.
AVERTISSEMENT : Le chatbot Graph n'est pas programmé pour fournir des réponses explicites ou catégoriques à vos questions. Il transforme plutôt vos questions en demandes API qui sont distribuées aux différents services informatiques officiellement administrés par l'EPFL. Son but est uniquement de collecter et de recommander des références pertinentes à des contenus que vous pouvez explorer pour vous aider à répondre à vos questions.
We study the interfacial electronic properties of a model Si-SiO2-Si structure which is intended to simulate the substrate-oxide-polysilicon stack in metal-oxide-semiconductor devices. The structural properties of this model are shown to match closely thos ...
We investigate structural, electronic, dynamical, and dielectric properties of zircon (ZrSiO4) within density-functional theory. The atomic structure is fully relaxed and the structural parameters are found to differ by less than 1.5% from the experimental ...
We applied the internal photoemission technique to the direct observation of deep levels together with barrier heights and band discontinuities at different semiconductor heterostructure interfaces. Its performances and capabilities are superior to those o ...
Studies have been carried out on aqueous colloidal suspensions of semiconductors, principally by using laser flash-photolysis techniques, in order to scrutinize in detail the dynamics of light-induced charge transfer reactions occuring at the solid-electro ...
We analyze the electronic properties of quantum wires with a Z-like profile within four-band models for the valence band of a semiconductor of diamond and zinc blende type. Group-theoretical considerations show that the valence-band structure is doubly deg ...
We present a method for obtaining well-localized Wannier-like functions (WF's) for energy bands that are attached to or mixed with other bands. The present scheme removes the limitation of the usual maximally localized WF's method [N. Marzari and D. Vander ...
We report on carrier-induced effects on emission and absorption in forward biased GaAs/AlGaAs V-groove quantum wire (QWR) diodes observed using low-temperature (10 K) photoluminescence (PL), electroluminescence (EL) and PL excitation (PLE) spectroscopy. In ...
We discuss the structural, electronic and dielectric properties of a model structure of the Si(100)-SiO2 interface that accounts for the amorphous nature of the oxide. After showing that the structural properties of this model are consistent with a variety ...
The optical properties of high-quality V-groove GaAs/AlxGa1-xAs quantum wires have been investigated using low-temperature photoluminescence (PL) and photoluminescence excitation (PLE) techniques. We systematically study the evolution of PL and PLE spectra ...
