Power-scalable 1.57µm mode-locked semiconductor disk laser using wafer fusion
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A 1.6 mu m mode-locked Raman fiber laser pumped by a 1480 nm semiconductor disk laser is demonstrated. Watt-level core pumping of the single-mode fiber Raman lasers with low-noise disk lasers together with semiconductor saturable absorber mirror mode locki ...
Measuring the turn-on delay of diode lasers provides useful information on carrier recombination dynamics, particularly Auger recombination, essential for their design for high-speed modulation and power-efficient performance. Here we present a rigorous, c ...
We demonstrate optofluidic evanescent dye lasers based on two types of solid distributed feedback (DFB) grating cavities- the first order linear DFB gratings which gives in-plane laser emitting and second order circular DFB gratings which gives surface las ...
Spie-Int Soc Optical Engineering, Po Box 10, Bellingham, Wa 98227-0010 Usa2010
With the arrival of mode locking for Q-switched lasers to generate ultra short light pulses, a method to measure their expected time duration in the psec range was needed. A novel method, based on an intensity correlation measurement using optical second h ...
We report 1.3-mu m mode-locked optically pumped semiconductor disk laser (SDL) made by wafer fusion. The gain medium and the saturable absorber, both based on an InP material system, were integrated with AlGaAs-GaAs distributed Bragg reflectors by localize ...
Institute of Electrical and Electronics Engineers2010
A mode-locked Raman fiber laser pumped by 1.3 mu m semiconductor disk laser is demonstrated. Direct Watt-level core-pumping of the single-mode fiber Raman lasers and amplifiers with low-noise disk lasers is demonstrated to represent a highly practical solu ...
Pulse coding techniques are proposed in combination with Fabry-Perot lasers for simultaneous strain and temperature sensing based on hybrid spontaneous Raman-Brillouin scattering. Combination of both techniques allows for ~0.27K/~30με resolution along 25-k ...
3 W at genuine red wavelength of 650 nm has been achieved from a semiconductor disk laser by frequency doubling. An InP based active medium was fused with a GaAs/AlGaAs distributed Bragg reflector resulting in an integrated monolithic gain mirror. 6.6 W of ...
We propose a simple technique to realize Brillouin slow light in nearly transparent regime. A current-modulated semiconductor laser by a step function is used as Brillouin pump to generate a Brillouin loss doublet. ...
We demonstrate simultaneous strain and temperature sensing based on hybrid Raman and Brillouin scattering with enhanced performance thanks to the combined use of standard Fabry–Perot lasers in conjunction with optical pulse coding techniques. The combinati ...