Precise control of multilayered structures of Nb–O–N thin films by the use of reactive gas pulsing process in DC magnetron sputtering
Graph Chatbot
Chattez avec Graph Search
Posez n’importe quelle question sur les cours, conférences, exercices, recherches, actualités, etc. de l’EPFL ou essayez les exemples de questions ci-dessous.
AVERTISSEMENT : Le chatbot Graph n'est pas programmé pour fournir des réponses explicites ou catégoriques à vos questions. Il transforme plutôt vos questions en demandes API qui sont distribuées aux différents services informatiques officiellement administrés par l'EPFL. Son but est uniquement de collecter et de recommander des références pertinentes à des contenus que vous pouvez explorer pour vous aider à répondre à vos questions.
The invention relates to an effusing source for film deposition made of a reservoir comprising one hole characterized by the fact that the hole diameter is less than one order of magnitude than the mean free path of the molecules determined by the pressure ...
ECOLE POLYTECHNIQUE FEDERALE LAUSANNE (ECOL-Non-standard) BENVENUTI G (BENV-Individual) AMOROSI S (AMOR-Individual) HALARY-WAGNER E (HALA-Individual)2002
Uniaxial fragmentation tests were carried out in situ in a scanning electron microscope (SEM) on 10-nm-thick silicon oxide coatings deposited by plasma enhanced chemical vapor deposition on poly(ethylene terephthalate). In order to prevent charging effects ...
AIN is a material used in a wide variety of applications such as electroacoustic devices, blue diodes, IR windows, thermal conductors, metal-insulator-semiconductor structures, integrated circuit packaging, etc. In this work thin piezoelectric AIN polycrys ...
Single crystals of layered semiconductors such as WS2 and MoS2 have already proven their efficiency as active elements in photovoltaic cells. Due to their high optical absorption coefficient in the visible range, these materials could be used in the form o ...
There is a need for chemically resistant coatings that protect the exposed surface of microfluidics components. Pinhole free films with low stress and a good uniformity on flat and inclined surfaces are required. In this study, amorphous silicon carbide (S ...
Particle contamination formed in reactive plasmas imposes an upper limit on the rate for particle-free deposition. Conversely, these plasmas could be exploited to produce nanometric clusters and particles for various applications. Infrared absorption spect ...
Mat. Res. Soc. Symp. Proc. Vol. 507, Materials Research Society1998
We use molecular dynamics to analyze the dependence on the impact angle of the distribution of defects originated by the deposition of a Ag/sub 19/ cluster on Pd(100) at initial kinetic energies 0.1, 2, 20 and 95 eV. For increasing energy the cluster under ...
A combined PVD/PECVD process for the vacuum deposition of titaniumcontainingamorphoushydrogenatedcarbonfilms is described. Elemental compositions of the deposited films have been determined by in situ core level photoelectron spectroscopy (XPS). The long-t ...
Highly textured PZT(111), PZT(001/100) and random PZT films have been grown on Pt and RuO2 bottom electrodes by means of an in-situ, multimagnetron reactive sputtering process with three metal targets (Pb, Zr, Ti). The orientation was varied with the botto ...
Oriented films of tetracene and pentacene have been obtained by high vacuum sublimation onto oriented poly(tetrafluoroethylene) (PTFE) substrates. Polymorphism, orientation, and morphology of the pentacene and tetracene films are studied as a function of d ...
