Publication

TEM characterization of textured silicon heterojunction solar cells

Publications associées (408)

Model for a-Si:H/c-Si interface recombination based on the amphoteric nature of silicon dangling bonds

The performance of many silicon devices is limited by electronic recombination losses at the crystalline silicon (c-Si) surface. A proper surface passivation scheme is needed to allow minimizing these losses. The surface passivation properties of amorphous ...

2007

In situ silicon oxide based intermediate reflector for thin-film silicon micromorph solar cells

Christophe Ballif, Julien Claude Bailat, Andrea Feltrin, Adrian Billet

We show that SiO-based intermediate reflectors (SOIRs) can be fabricated in the same reactor and with the same process gases as used for thin-film silicon solar cells. By varying input gas ratios, SOIR layers with a wide range of optical and electrical pro ...

2007

Charge transport mechanisms in organic and microcrystalline silicon field-effect transistors

Libero Zuppiroli, Marie-Noëlle Bussac, Steven Konezny

Several organic and inorganic materials have emerged as promising candidates for the active layer of field-effect transistors (FETs) fabricated on flexible substrates. The charge transport models necessary for device optimization in these systems are at di ...

International Society for Optical Engineering, Bellingham WA, WA 98227-0010, United States2007

Dynamics of Photoinduced Interfacial Electron Transfer and Charge Transport in Dye-Sensitized Mesoscopic Semiconductors

Jacques-Edouard Moser, Christophe Bauer, Joël Teuscher, Bernard Wenger, Verner Thorsmolle

Molecular systems designed for the conversion of solar energy offer ideal models in the study of the kinetics of light-induced electron transfer at surfaces. Due to their high porosity, nanocrystalline oxide semiconductor films allow investigations of inte ...

Schweizerische Chemische Gesellschaft2007

Towards Very Low-Cost Mass Production of Thin-film Silicon Photovoltaic (PV) Solar Modules on Glass

Arvind Shah

Production volume of PV modules increases at > 35% per year, but one is yet far from making a global impact on energy supply. One of the obstacles is given by the present high production costs of PV modules. A possibility to reduce costs are thin-film PV m ...

2006

Quantum dots in photovoltaic solar energy conversion

Josef Andreas Schuler

Quantum dots have attracted recently considerable attention of the research communities in solid state and biophysics. Due to their fascinating optical and electronical properties, nanometer-scaled structures play an important role in solar energy conversi ...

2006

Efficiency limits for single-junction and tandem solar cells

Arvind Shah

Basic limitations of single-junction and tandem p-n and p-i-n diodes are established from thermodynamical considerations on radiative recombination and semi-empirical considerations on the classical diode equations. These limits are compared to actual valu ...

2006

Solar Cell Powering with Integrated Global Positioning System for mm3 Size Robots

Jean-Marc Breguet, Walter Driesen, Alexis Boletis, Alberto Brunete

new concept of a solar cell powering with integrated Global Positioning System (GPS) for microrobots is proposed. The main idea is to use a projector to transfer energy and to provide global positioning information to the robots that are equipped with mult ...

2006

Tandem photovoltaic conversion device

Michael Graetzel, Paul Liska, Ravindranathan Thampi, Pascal Comte

The tandem photovoltaic conversion device comprises at least one top photovoltaic cell unit and one bottom photovoltaic cell unit laminated along a light transmitting direction and electrically connected, wherein said top cell unit is a dye sensitised or s ...

2006

Ion scattering simulations of the Si(100)-SiO2 interface

Alfredo Pasquarello, Angelo Bongiorno

We carry out ion scattering simulations to investigate the nature of the transition region at the Si(100)-SiO2 interface. Ion scattering experiments performed in the channeling geometry provide us with a genuine interfacial property, the excess Si yield, r ...

2006

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