TEM characterization of textured silicon heterojunction solar cells
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Nanocryst. titanium oxide films were prepd. by DC magnetron sputtering onto SnO2:F-coated glass substrates kept at temps. in the 50 < τs < 300° range. Dye sensitization in cis-dithiocyanato-bis(2,2'-bipyridyl-4,4'-dicarboxylate) ruthenium(II) yielded solar ...
Three-layer structures of thick (>5 μm) films of nanosized titanium dioxide, zirconium dioxide, and carbon have been screen-printed on a semi-prodn. level for use in photosensitized photovoltaic devices. The films have been characterized using SEM, x-ray d ...
'Micromorph' tandem solar cells consisting of a microcrystalline silicon bottom cell and an amorphous silicon top cell are considered as one of the most promising new thin-film silicon solar-cell concepts. Their promise lies in the hope of simultaneously a ...
We have studied ultrafast dynamics of photoexcited carriers in μc-Si:H by pump and probe laser spectroscopy. We have found that the dynamics of photoexcited carriers in μc-Si:H depend on the crystallinity of the material: in the samples with low crystallin ...
The advantages and limitations of photovoltaic solar modules for energy generation are reviewed with their operation principles and physical efficiency limits. Although the main materials currently used or investigated and the associated fabrication techno ...
Microcavity light-emitting diodes (MCLEDs) with top-emitting geometry have been grown by molecular beam epitaxy on GaAs and Si substrates. External quantum efficiencies of up to 10% were obtained for 420 x 420 mu m(2) homoepitaxial devices. The efficiency ...
Type-II GaAs/AlAs quantum-well samples grown by low-pressure metal-organic vapour-phase epitaxy consisting of 50 periods of either 2 monolayers (ML), 4 ML, 5 ML, 6 ML, or 7 ML GaAs embedded in 28 ML AlAs were under investigation. Even at room temperature d ...
Conformal epitaxy is an epitaxial growth technique capable of yielding low dislocation density III-V films on Silicon. In this technique, the growth of the m-V material occurs parallel to the silicon substrate, from the edge of a previously deposited III-V ...
Identical GaAs/Al0.2Ga0.8As multiple-quantum-well (MQW) structures uniformly doped with Si at various concentrations ranging from 1x10(17) to 1X10(19) cm(-3) are grown by molecular-beam epitaxy to study the effects of the background Si-doping level on the ...
Nanocrystalline semiconductor films are constituted by a network of mesoscopic oxide particles, such as TiO2, ZnO, Nb2O5 which are interconnected to allow for electronic conduction to take place. The pores between the particles are filled with a semiconduc ...
