Excited excitonic states observed in semiconductor quantum dots using polarization resolved optical spectroscopy
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A quantum dot is a semiconductor nanostructure that confines the motion of conduction band electrons and valence band holes in all three spatial directions, thus creating fully discrete energy levels. The confinement in the InAs/GaAs material system is gen ...
Quantum dots (QDs) have a potential for application in semiconductor optical amplifiers (SOAs), due to their high saturation power related to the low differential gain, fast gain recovery and wide gain spectrum compared to quantum wells. Besides all advant ...
The authors present a polarization-resolved photoluminescence study of single semiconductor quantum dots (QDs) interconnected to quantum wires, measured both in a top geometry, and in a less conventional cleaved-edge geometry. Strong polarization anisotrop ...
We present a combined theoretical and experimental analysis to describe the interplay between polarization field, charge screening, and radiative and nonradiative recombinations in AlGaN/ GaN-based nanostructures. We perform the study of photoluminescence ...
With help of liquid crystal polymers (LCP) a polarization sensitive diffuser has been realized. By using convex microstructures made of LCP and an index matching layer, two distinct functions depending on the orientation of the device and the polarization ...
We report a novel three-contacts vertical-cavity surface-emitting laser (VCSEL) for use in polarization-sensitive optical applications. The device consists in two vertical optically active cavities, coupled by a common min-or. We demonstrate that one can i ...
We report on the ferroelectric domain evolution as a function of the depth of the surface of 100 mum thick bulk Pb(Zr,Ti)O-3 (PZT) doped with 2% Nb. Ferroelectric domain imaging (FDI) was performed by piezoelectric detection assisted by atomic force micros ...
We present ultrafast pump-probe studies on chem. prepd. CdSe nanocrystals. Upon pulsed optical excitation we find pronounced oscillations, indicating strong coupling to a LO phonon mode. From the polarization dependence of the signal addnl. information abo ...
We present an experimental study of the dynamical screening effect of the built-in field in GaN-based quantum well structures by means of picosecond time-resolved luminescence measurements. Our results clearly show that the recombination dynamics of the ph ...
In the present paper, we address a review of group-III nitride quantum wells and quantum dots realized by molecular beam epitaxy (MBE) using ammonia as a nitrogen source. Some important features of the growth of nitrides by MBE using ammonia are pointed ou ...
