Effect of Nb-donor and Fe-acceptor dopants in (Bi1/2Na1/2)TiO3–BaTiO3–(K0.5Na0.5)NbO3 lead-free piezoceramics
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GeSn is a promising group-IV semiconductor material for on-chip Si photonics devices and high-mobility transistors. These devices require the use of doped GeSn regions, achieved preferably in situ during epitaxy. From the electronic valence point of view, ...
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